عنوان

Handbook for III-V high electron mobility transistor technologies /

شابک

042946004X

شابک

0429862512

شابک

0429862520

شابک

0429862539

شابک

9780429460043

شابک

9780429862519

شابک

9780429862526

شابک

9780429862533

شابک اشتباه

1138625272

شابک اشتباه

9781138625273

عنوان اصلي

Handbook for III-V high electron mobility transistor technologies /

نام عام مواد

[Book]

نام نخستين پديدآور

edited by D. Nirmal, J. Ajayan.

محل نشرو پخش و غیره

Boca Raton, FL :

نام ناشر، پخش کننده و غيره

CRC Press,

تاریخ نشرو بخش و غیره

[2019]

نام خاص و کميت اثر

1 online resource (xii, 430 pages)

متن يادداشت

Includes bibliographical references and index.

متن يادداشت

1. Motivation Behind High Electron Mobility Transistors [Mayank Chakraverty] 2. Introduction to High Electron Mobility Transistors [Rama Komaragiri] 3. HEMT Material Technology and Epitaxial Deposition Techniques [Rama Komaragiri] 4. Source/Drain, Gate and Channel Engineering in HEMTs [Palash Das, T.R. Lenka, Satya Sopan Mahato, and A.K. Panda] 5. AlGaN/GaN HEMTs for High Power Applications [P. Prajoon and Anuja Menokey] 6. AlGaN/GaN HEMT Fabrication and Challenges [Gourab Dutta, Srikanth Kanaga, Nandita DasGupta, and Amitava DasGupta] 7. Analytical Modeling of High Electron Mobility Transistors [N.B. Balamurugan] 8. Polarization Effects in AlGaN/GaN HEMTs [Palash Das, T.R. Lenka, Satya Sopan Mahato, and A.K. Panda] 9. Current Collapse in AlGaN/GaN HEMTs [Sneha Kabra and Mridula Gupta] 10. AlGaN/GaN HEMT Modeling and Simulation [Binit Syamal and Atanu Kundu] 11. Breakdown Voltage Improvement Techniques in AlGaN/GaN HEMTs [Vimala Palanichamy] 12. InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications [Nilesh Kumar Jaiswal and V.N. Ramakrishnan] 13. A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System [Roman Garcia-Perez, Karen Lozano, Jorge Castillo, and Hasina F. Huq] 14. Metamorphic HEMTs for Sub Millimeter Wave Applications [J. Ajayan and D. Nirmal] 15. Metal Oxide Semiconductor High Electron Mobility Transistors [D.K. Panda, G. Amarnath, and T.R. Lenka] 16. Double Gate High Electron Mobility Transistors [Ajith Ravindran]

بدون عنوان

0

متن يادداشت

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

منبع سفارش / آدرس اشتراک

Taylor & Francis

شماره انبار

9780429460043

عنوان

Handbook for III-V high electron mobility transistor technologies.

شماره استاندارد بين المللي کتاب و موسيقي

9781138625273

موضوع مستند نشده

Modulation-doped field-effect transistors, Handbooks, manuals, etc.

موضوع مستند نشده

Modulation-doped field-effect transistors.

موضوع مستند نشده

SCIENCE-- Physics.

موضوع مستند نشده

TECHNOLOGY & ENGINEERING-- Mechanical.

موضوع مستند نشده

TECHNOLOGY-- Electricity.

موضوع مستند نشده

TECHNOLOGY-- Electronics-- Circuits-- General.

موضوع مستند نشده

SCI-- 055000

موضوع مستند نشده

TEC-- 007000

موضوع مستند نشده

TEC-- 008010

موضوع مستند نشده

TEC-- 009070

موضوع مستند نشده

TJF

شماره

ويراست

شماره رده

نشانه اثر

مستند نام اشخاص تاييد نشده

Ajayan, J.

مستند نام اشخاص تاييد نشده

Nirmal, D.

تاريخ عمليات

20200822163533.0

قواعد فهرست نويسي ( بخش توصيفي )

pn

نام الکترونيکي

نوع ماده

[Book]

تكميل شده

Y