High throughput manufacturing of silicon nanobridges for the fabrication of 3D gate-all-around field effect transistors
نام عام مواد
[Thesis]
نام نخستين پديدآور
Jin Yong Oh
نام ساير پديدآوران
Islam, M. Saif
وضعیت نشر و پخش و غیره
نام ناشر، پخش کننده و غيره
University of California, Davis
تاریخ نشرو بخش و غیره
2014
مشخصات ظاهری
نام خاص و کميت اثر
178
يادداشت کلی
متن يادداشت
Committee members: Amitharajah, Rajeevan; Horsley, David
یادداشتهای مربوط به نشر، بخش و غیره
متن يادداشت
Place of publication: United States, Ann Arbor; ISBN=978-1-321-36357-9
یادداشتهای مربوط به پایان نامه ها
جزئيات پايان نامه و نوع درجه آن
Ph.D.
نظم درجات
Electrical and Computer Engineering
کسي که مدرک را اعطا کرده
University of California, Davis
امتياز متن
2014
یادداشتهای مربوط به خلاصه یا چکیده
متن يادداشت
Self-assembled nanowires chemically synthesized by bottom-up approaches have attracted considerable attention due to their properties that are not common in their bulk or thin film counterparts. Their potential to offer novel functionality opens up opportunities for innovative genres of devices. Indeed, a number of innovative devices, such as transistors, diodes, bio/chemical sensors, photovoltaic devices, and even embryonic low-density integrated circuits, have been demonstrated by using various kinds of nanowires. In contrast to nanostructured materials created by the microfabrication technology pursued by the microelectronics industry, self-assembled nanowires inheritedly exhibit a high degree of variability in their dimensions, densities, locations, and alignment, etc. Despite the promise of nanowires, such uncertainty prevents them from utilization in mass-manufacturing processes and large-scale device integration.