Lecture 1 Fundamental aspects of the semiconductor-solution interface --; Lecture 2 The silicon/electrolyte interface --; Lecture 3 Porous silicon: material processing, properties and applications --; Lecture 4 Luminescence of porous silicon after electrochemical oxidation --; Lecture 5 Mechanism for light emission from nanoscale silicon --; Lecture 6 Theory of silicon crystallites. Part II --; Lecture 7 Doping of a quantum dot and self-limiting effect in electrochemical etching --; Lecture 8 Electronic and optical properties of semiconductors quantum wells --; Lecture 9 What can be learned from time resolved measurements on porous silicon luminescence --; Lecture 10 Ion beam analysis of thin films. Applications to porous silicon --; Lecture 11 IR spectroscopy of porous silicon --; Lecture 12 Nano characterization of porous silicon by transmission electron microscopy --; Lecture 13 Electron paramagnetic resonance spectroscopy: Defect and structural analysis of solids --; Lecture 14 Raman scattering in silicon nanostructures --; Lecture 15 Scattering of X-rays --; Lecture 16 X-ray photoemission spectroscopy --; Lecture 17 Optoelectronic properties of porous silicon. The electroluminescent devices --; Lecture 18 Porous silicon luminescence under cathodic polarisation conditions --; Lecture 19 Interrelation between electrical properties and visible luminescence of porous silicon --; Lecture 20 Characteristics of porous n-type silicon obtained by photoelectrochemical etching --; Lecture 21 Porous Si: From single porous layers to porosity superlattices.
یادداشتهای مربوط به خلاصه یا چکیده
متن يادداشت
The discovery of bright visible light emission from porous silicon has opened the door to various nanometer-sized silicon structures where the confinement of carriers gives rise to interesting physical properties. While the high efficiency of the light emission in the visible range is the common and most prominent feature, their structures display properties similar to other highly divided materials (even non-semiconductors), which justifies a multidisciplinary approach. The book addresses graduate students, physicists and engineers who want to learn about optoelectronic devices based on porous silicon and on the electrochemistry of semiconductors, basic techniques, and the theoretical background.
موضوع (اسم عام یاعبارت اسمی عام)
موضوع مستند نشده
Crystallography.
موضوع مستند نشده
Engineering.
موضوع مستند نشده
Physics.
رده بندی کنگره
شماره رده
TK7871
.
85
نشانه اثر
E358
1995
نام شخص به منزله سر شناسه - (مسئولیت معنوی درجه اول )