عنوان

Silicon carbide. Volume 1, Growth, defects, and novel applications

شابک

352740953X

شابک

352762905X

شابک

3527629068

شابک

9783527409532

شابک

9783527629053

شابک

9783527629060

شماره

b563719

عنوان اصلي

Silicon carbide. Volume 1, Growth, defects, and novel applications

نام عام مواد

[Book]

نام نخستين پديدآور

edited by Peter Friedrichs [and others].

محل نشرو پخش و غیره

Weinheim

نام ناشر، پخش کننده و غيره

Wiley-VCH Verlag

تاریخ نشرو بخش و غیره

©2010.

نام خاص و کميت اثر

(xxii, 506 pages)

متن يادداشت

Growth of SiC. Bulk Growth of SiC --; Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution / Sakwe Aloysius Sakwe, Mathias Stockmeier, Philip Hens, Ralf Muller, Desiree Queren, Ulrike Kunecke, Katja Konias, Rainer Hock, Andreas Magerl, Michel Pons, Albrecht Winnacker, Peter Wellmann --; Bulk and Epitaxial Growth of Micropipe-Free Silicon Carbide on Basal and Rhombohedral Plane Seeds / Boris M Epelbaum, Octavian Filip, Albrecht Winnacker --; Formation of Extended Defects in 4H-SiC Epitaxial Growth and Development of a Fast Growth Technique / Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano --; Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects / Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta --; Characterization of Defects and Material Properties. Identification of Intrinsic Defects in SiC: Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches / Michel Bockstedte, Adam Gali, Alexander Mattausch, Oleg Pankratov, John W Steeds --; EPR Identification of Intrinsic Defects in SiC / J Isoya, T Umeda, N Mizuochi, N T Son, E Janzen, T Ohshima --; Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide / Martin Rambach, Anton J Bauer, Heiner Ryssel --; Optical Properties of As-Grown and Process-Induced Stacking Faults in 4H-SiC / Jean Camassel, Sandrine Juillaguet --; Characterization of Defects in Silicon Carbide by Raman Spectroscopy / Martin Hundhausen, Roland Pusche, Jonas R̲hrl, Lothar Ley --; Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation / Tsunenobu Kimoto, Katsunori Danno, Jun Suda --; Identification and Carrier Dynamics of the Dominant Lifetime Limiting Defect in n 4H-SiC Epitaxial Layers / Paul B Klein --; Optical Beam Induced Current Measurements: Principles and Applications to SiC Device Characterization / Christophe Raynaud, Duy-Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, Mihai Lazar, Dominique Planson --; Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation / Tetsuo Hatakeyama --; Analysis of Interface Trap Parameters from Double-Peak Conductance Spectra Taken on N-Implanted 3C-SiC MOS Capacitors / M Krieger, S Beljakowa, L Trapaidze, T Frank, H B Weber, G Pensl, N Hatta, M Abe, H Nagasawa, A Schoner --; Non-Basal Plane SiC Surfaces: Anisotropic Structures and Low-Dimensional Electron Systems / Ulrich Starke --; Novel Applications. Comparative Columnar Porous Etching Studies on n-Type 6H SiC Crystalline Faces / Y Ke, R P Devaty, W J Choyke --; Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS / Christian A Zorman, Rocco J Parro --; Epitaxial Graphene: A New Material / Th Seyller, A Bostwick, K V Emtsev, K Horn, L Ley, J L McChesney, T Ohta, J D Riley, E Rotenberg, F Speck --; Density Functional Study of Graphene Overlayers on SiC / Oleg Pankratov, Alexander Mattausch.

موضوع مستند نشده

Halvledare.

موضوع مستند نشده

Silicon carbide.

شماره رده

نشانه اثر

مستند نام اشخاص تاييد نشده

edited by Peter Friedrichs [and others].

مستند نام اشخاص تاييد نشده

Peter Friedrichs

نام الکترونيکي

نوع ماده

[Book]

تكميل شده

Y