Introduction -- Semiclassical Transport Theory -- The Monte-Carlo Method -- Scattering Mechanisms -- Full-Band Structure -- Device Simulation -- Momentum-Based Transport Models -- Stochastic Properties of Monte-Carlo Device Simulations -- Results -- Subject Index.
بدون عنوان
0
یادداشتهای مربوط به خلاصه یا چکیده
متن يادداشت
This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.
ویراست دیگر از اثر در قالب دیگر رسانه
شماره استاندارد بين المللي کتاب و موسيقي
9783709172261
قطعه
عنوان
Springer eBooks
موضوع (اسم عام یاعبارت اسمی عام)
موضوع مستند نشده
Electronics.
موضوع مستند نشده
Engineering.
موضوع مستند نشده
Optical materials.
نام شخص به منزله سر شناسه - (مسئولیت معنوی درجه اول )