Springer International Series in Engineering and Computer Science, Power Electronics and Power Systems
یادداشتهای مربوط به خلاصه یا چکیده
متن يادداشت
This is the first comprehensive resource of power device electrical characteristics in a cryogenic environment. Using theoretical and experimental knowledge from the literature, temperature dependence of fundamental silicon material parameters like intrinsic carrier concentration, carrier mobilities, lifetimes and bandgap narrowing was identified. The temperature dependent model of avalanche breakdown was developed using experimental data on numerous devices. A wide range of power devices, each with its own unique features, was chosen for theoretical and experimental analysis. Using these analyses, Schottky diodes, power MOSFETs, power BJTs, and power JFETs were optimized in the 300-77K temperature range. Cryogenic Operation of Silicon Power Devices presents the different characteristics of power devices operated below -55°C (220K). It provides data and physics based models for power devices operated at temperatures down to 77K for the first time within a single source. All commercially available devices have been included to provide comprehensive coverage. Also, a fundamental analysis of devices identifies the suitability of various devices to applications requiring cryogenic operations. A quantitative analysis of the relative strengths and weaknesses of these devices is also presented.
ویراست دیگر از اثر در قالب دیگر رسانه
شماره استاندارد بين المللي کتاب و موسيقي
9781461376354
قطعه
عنوان
Springer eBooks
موضوع (اسم عام یاعبارت اسمی عام)
موضوع مستند نشده
Computer engineering.
موضوع مستند نشده
Engineering.
موضوع مستند نشده
Optical materials.
موضوع مستند نشده
Surfaces (Physics).
نام شخص به منزله سر شناسه - (مسئولیت معنوی درجه اول )