1. Nanoscale transistors: device physics, modeling and simulation
Author: Lundstrom, Mark
Library: Central Library of Sharif University of Technology (Tehran)
Subject: ، Nanotechnology,، Metal oxide semiconductor field-effect transistors-- Mathematical models,، Nanostructured materials-- Mathematical models
Classification :
T
174
.
7
.
L86
2006
2. Nanoscale transistors: device physics, modeling and simulation
Author: / Mark S. Lundstrom, Jing Guo.,لاندستروم,Lundstrom
Library: National Library and Archives of Islamic Republic of Iran (Tehran)
Subject: نانوتکنولوژی,ترانزیستورهای ام. او . اس با اثر میدان,موادنانوساختار, -- الگوهای ریاضی, -- الگوهای ریاضی
Classification :
T
۱۷۴
/
۷
/
ل
۲
ن
۲ ۱۳۸۵
3. Nanoscale Transistors: Device physics, modeling and simulation
Author: Mark S. Lundstrom, Jing Guo
Library: Central Library and Information Center of Shahed University (Tehran)
Subject: Metal oxide Semiconductor field-effect,Transistors -- Mathematical models,Nanostructured materials - Mathematical models,Nanotechnology
Classification :
T
،
174
.
7
،.
L86
،
2006
