عنوان
پدید آورنده
موضوع
رده
TA 418 .9 .T45 F465 2005
TA
418
.
9
.
T45
F465
2005
کتابخانه
محل استقرار
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Ferroelectric thin films :basic properties and device physics for memory applications
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Berlin ; New York
Name of Publisher, Distributor, etc.
Springer
Date of Publication, Distribution, etc.
c2005
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xiii, 244 p. : ill. ; 24 cm.
SERIES
Other Title Information
Topics in applied physics ;v. 89.
GENERAL NOTES
Text of Note
Includes bibliographical references and index
NOTES PERTAINING TO TITLE AND STATEMENT OF RESPONSIBILITY
Text of Note
Masanori Okuyama, Yoshihiro Ishibashi )eds.(
TOPICAL NAME USED AS SUBJECT
Entry Element
، Thin films
Entry Element
، Ferroelectricity
DEWEY DECIMAL CLASSIFICATION
Number
621
.
39/732
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TA
418
.
9
.
T45
F465
2005
PERSONAL NAME - PRIMARY RESPONSIBILITY
Relator Code
TI
AU Okuyama, Masanori 1946-
AU Ishibashi, Yoshihiro
SE
