عنوان

Semiconductor physics and devices :

(Number (ISBN

0072321075 (acid-free paper)

Country Code

IR

Number

EN-50829

.Language of Text, Soundtrack etc

انگلیسی

Country of publication

IR

Title Proper

Semiconductor physics and devices :

General Material Designation

[Book]

Other Title Information

:basic principles

First Statement of Responsibility

/ Donald A. Neamen

Edition Statement

3rd ed.

Place of Publication, Distribution, etc.

Boston

Name of Publisher, Distributor, etc.

: McGraw-Hill,

Date of Publication, Distribution, etc.

, c2003.

Specific Material Designation and Extent of Item

xxiv, 746 p. , ill. (some col.) , 24 cm.

Text of Note

Electronic

Text of Note

Includes bibliographical references and index.

Text of Note

The Crystal Structure of Solids -- Semiconductor Materials -- Types of Solids -- Space Lattices -- Atomic Bonding -- Imperfections and Impurities in Solids -- Growth of Semiconductor Materials -- Introduction to Quantum Mechanics -- Schrodinger's Wave Equation -- Applications of Schrodinger's Wave Equation -- Extensions of the Wave Theory to Atoms -- Introduction to the Quantum Theory of Solids -- Allowed and Forbidden Energy Bands -- Electrical Conduction in Solids -- Extension to Three Dimensions -- Density of States Function -- Statistical Mechanics -- The Semiconductor in Equilibrium -- Charge Carriers in Semiconductors -- Dopant Atoms and Energy Levels -- The Extrinsic Semiconductor -- Statistics of Donors and Acceptors -- Charge Neutrality -- Position of Fermi Energy Level -- Carrier Transport Phenomena -- Carrier Drift -- Carrier Diffusion -- Graded Impurity Distribution -- The Hall Effect -- Nonequilibrium Excess Carriers in Semiconductors -- Carrier Generation and Recombination -- Characteristics of Excess Carriers -- Ambipolar Transport -- Quasi-Fermi Energy Levels -- Excess-Carrier Lifetime -- Surface Effects -- The pn Junction -- Basic Structure of the pn Junction -- Zero Applied Bias -- Reverse Applied Bias -- Nonuniformly Doped Junctions -- The pn Junction Diode -- pn Junction Current -- Small-Signal Model of the pn Junction -- Generation-Recombination Currents -- Junction Breakdown -- Charge Storage and Diode Transients -- The Tunnel Diode -- Metal-Semiconductor and Semiconductor Heterojunctions -- The Schottky Barrier Diode -- Metal-Semiconductor Ohmic Contacts -- Heterojunctions -- The Bipolar Transistor -- The Bipolar Transistor Action -- Minority Carrier Distribution -- Low-Frequency Common-Base Current Gain -- Nonideal Effects -- Equivalent Circuit Models -- Frequency Limitations -- Large-Signal Switching -- Other Bipolar Transistor Structures -- Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor -- The Two-Terminal MOS Structure -- Capacitance-Voltage Characteristics -- The Basic MOSFET Operation -- Frequency Limitations -- The CMOS Technology -- Metal-Oxide-Semiconductor Field-Effect Transistor: Additional Concepts -- Nonideal Effects -- MOSFET Scaling -- Threshold Voltage Modifications -- Additional Electrical Characteristics -- Radiation and Hot-Electron Effects -- The Junction Field-Effect Transistor -- JFET Concepts -- The Device Characteristics -- Nonideal Effects -- Equivalent Circuit and Frequency Limitations -- High Electron Mobility Transistor -- Optical Devices -- Optical Absorption -- Solar Cells -- Photodetectors -- Photoluminescence and Electroluminescence -- Light Emitting Diodes -- Laser Diodes -- Semiconductor Power Devices -- Power Bipolar Transistors -- Power MOSFETs -- Heat Sinks and Junction Temperature -- The Thyristor -- The Error Function -- "Derivation" of Schrodinger's Wave Equation -- Unit of Energy--The Electron-Volt.

Semiconductors

Class number

Neamen, Donald A.

Country

ایران

Host name

0071198628.pdf

Access number

عادی

Compression information

عادی

Date and Hour of Consultation and Access

0071198628.pdf

Electronic Format Type

متن

old catalog

e

BL

1

a

Y