(NATO science series. Series II, Mathematics, physics and chemistry
Series Title
(NATO science series. Series II, Mathematics, physics and chemistry
Volume Designation
; v. 220)
Volume Designation
; v. 220)
GENERAL NOTES
Text of Note
"Proceedings of the NATO Advanced Research Workshop on Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices, held July 11-14, 2005, in St. Petersburg, Russia"--T.p. verso.
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Electronic
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and indexes.
CONTENTS NOTE
Text of Note
High-k technology -- Defects in high-k dielectrics : characterization -- High-k processing and defects -- High-k theory -- Electrically active defects -- Interfaces -- Processing, characterization and devices.
SERIES
Title
NATO science series. Series II, Mathematics, physics, and chemistry
Volume Number
v. 220
OTHER VARIANT TITLES
Variant Title
Nano-electronic semiconductor devices
TOPICAL NAME USED AS SUBJECT
Gate array circuits , Congresses
Dielectrics , Congresses
Semiconductors , Defects , Congresses
LIBRARY OF CONGRESS CLASSIFICATION
Class number
E-BOOK
PERSONAL NAME - PRIMARY RESPONSIBILITY
NATO Advanced Research Workshop on Defects in High-k Dielectric Nano-electronic Semiconductor Devices (2005 : Saint Petersburg, Russia)