INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
1598290045 (electronic bk.)
NATIONAL BIBLIOGRAPHY NUMBER
Country Code
IR
Number
EN-50848
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
COUNTRY OF PUBLICATION OR PRODUCTlON
Country of publication
IR
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Hf-based high-k dielectrics
General Material Designation
[Book]
Other Title Information
:process development, performance characterization, and reliability
First Statement of Responsibility
/ Young-Hee Kim, Jack C. Lee
EDITION STATEMENT
Edition Statement
1st ed.
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
San Rafael, Calif. (1537 Fourth Street, San Rafael, CA 94901 USA)
Name of Publisher, Distributor, etc.
: Morgan & Claypool Publishers,
Date of Publication, Distribution, etc.
, c2005.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
1 electronic text (x, 92 p. ill.) , digital file.
SERIES
Series Title
(Synthesis lectures on solid state materials and devices, 1932-1724
Volume Designation
; 1)
GENERAL NOTES
Text of Note
Part of : Synthesis digital library of engineering and computer science.
Text of Note
Title from PDF t.p. (viewed on Oct. 27, 2008).
Text of Note
Series from website.
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Electronic
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references (p. 86-90).
CONTENTS NOTE
Text of Note
In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results fromthe polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdownmay be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.
Text of Note
Introduction -- Front end device technology evolutions -- Beyond 45nm technology -- Issues in high-k dielectrics -- Hard- and soft-breakdown characteristics of ultrathin HfO2 under dynamic and constant voltage stress -- Motivation for high-k gate dielectrics -- Reliability issues of high-k dielectrics -- Breakdown behaviors of HfO2 under dc stressing -- Dynamic reliability of HfO2 -- Impact of high temperature forming gas and D2 anneal on reliability of HfO2 gate dielectrics -- Previous results -- Effect of D2 anneal on various surface preparations -- Effect of high temperature forming gas in terms of reliability -- Effect of barrier height and the nature of bilayer structure of HfO2 with dual metal gate technology -- Motivation -- Experimental procedure -- Results and discussion -- Bimodal defect generation rate by low barrier height and its impact on reliability characteristics -- Motivation -- Experimental procedure -- Results and discussion.
SERIES
Title
Synthesis lectures on solid state materials and devices (Online), 1932-1724
Volume Number
1
OTHER VARIANT TITLES
Variant Title
Synthesis digital library of engineering and computer science
TOPICAL NAME USED AS SUBJECT
Dielectrics
Hafnium oxide
Integrated circuits , Reliability
Semiconductors , Junctions
Breakdown (Electricity)
Metal oxide semiconductor field-effect transistors
LIBRARY OF CONGRESS CLASSIFICATION
Class number
E-BOOK
PERSONAL NAME - PRIMARY RESPONSIBILITY
Kim, Young-Hee, 1972-
PERSONAL NAME - SECONDARY RESPONSIBILITY
Lee, Jack Chung-Yeung
ORIGINATING SOURCE
Country
ایران
ELECTRONIC LOCATION AND ACCESS
Host name
1598290045.pdf
Access number
عادی
Compression information
عادی
Date and Hour of Consultation and Access
1598290045.pdf
Electronic Format Type
متن
old catalog
e
BL
1
a
Y
