Novel three-state quantum dot gate field effect transistor
General Material Designation
[Book]
Other Title Information
:fabrication, modeling, and applications
First Statement of Responsibility
/ Supriya Karmakar
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New Delhi
Name of Publisher, Distributor, etc.
: Springer,
Date of Publication, Distribution, etc.
, 2014.
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Electronic
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
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Includes bibliographical references..
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Includes bibliographical references and index..
CONTENTS NOTE
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Summary: The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
Text of Note
Introduction: Multi State Devices and Logic -- Quantum Dot Gate Field Effect Transistor Device Structures -- Quantum Dot Gate Field Effect Transistors Fabrication and Characterization -- Quantum DOT Gate Field Effect Transistors Theory and Device Modeling -- Quantum Dot Gate NMOS Inverter -- Quantum Dot Gate Field Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter -- Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum DOT Gate Field Effect Transistor (QDGFET) -- Performance in SUB-25nm Range -- Conclusions.