INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
9781461443377
NATIONAL BIBLIOGRAPHY NUMBER
Country Code
IR
Number
EN-57623
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
COUNTRY OF PUBLICATION OR PRODUCTlON
Country of publication
IR
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Materials and Reliability Handbook for Semiconductor Optical and Electron Device
General Material Designation
[Book]
Other Title Information
:[delta
First Statement of Responsibility
/ edited by Osamu Ueda, Stephen J. Pearton
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York, NY
Name of Publisher, Distributor, etc.
: Springer New York :Imprint: Springer,
Date of Publication, Distribution, etc.
, 2013.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
XV, 616 p. 410 illus., 131 illus. in color., online resource.
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Electronic
CONTENTS NOTE
Text of Note
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms. Provides the first handbook to cover all aspects of compound semiconductor device reliability Systematically describes research results on reliability and materials issues of both optical and electron devices developed since 2000 Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devices Includes experimental approaches in reliability studies Presents case studies of laser degradation and HEMT degradation
Text of Note
Preface -- Part 1. Materials Issues and Reliability of Optical Devices -- 1. Reliability Testing of Semiconductor Optical Devices -- 2. Failure Analysis of Semiconductor Optical Devices -- 3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication -- 4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation -- 5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes -- 6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers -- 7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes -- 8. InGaN Laser Diode Degradation -- 9. Radiation-enhanced Dislocation Glide - The Current Status of Research -- 10. Mechanism of Defect Reactions in Semiconductors -- Part 2. Materials Issues and Reliability of Electron Devices -- 11. Reliability Studies in the Real World -- 12. Strain Effects in AlGaN/GaN HEMTs -- 13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors -- 14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors -- 15. Novel Dielectrics for GaN Device Passivation And Improved Reliability -- 16. Reliability Simulation -- 17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy -- 18. Reliability Study of InP-Based HBTs Operating at High Current Density -- Index.?╗╣
TOPICAL NAME USED AS SUBJECT
Physics
Electronics
Optical materials
Surfaces (Physics)
Electronic books
LIBRARY OF CONGRESS CLASSIFICATION
Class number
E-BOOK
PERSONAL NAME - PRIMARY RESPONSIBILITY
Ueda, Osamu.
PERSONAL NAME - SECONDARY RESPONSIBILITY
Pearton, Stephen J
SpringerLink (Online service)
ORIGINATING SOURCE
Country
ایران
ELECTRONIC LOCATION AND ACCESS
Host name
9781461443360.pdf
Access number
عادی
Compression information
عادی
Date and Hour of Consultation and Access
9781461443360.pdf
Electronic Format Type
متن
old catalog
e
BL
1
a
Y
