INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
9789400777804
NATIONAL BIBLIOGRAPHY NUMBER
Country Code
IR
Number
EN-57547
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
COUNTRY OF PUBLICATION OR PRODUCTlON
Country of publication
IR
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Stochastic process variation in deep-submicron CMOS
General Material Designation
[Book]
Other Title Information
:circuits and algorithms
First Statement of Responsibility
/ Amir Zjajo
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Dordrecht
Name of Publisher, Distributor, etc.
: Springer,
Date of Publication, Distribution, etc.
, 2014.
SERIES
Series Title
(Springer series in advanced microelectronics
Volume Designation
; v.48)
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Electronic
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index..
CONTENTS NOTE
Text of Note
Summary: One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key device parameters affecting performance of integrated circuits. The growth of variability can be attributed to multiple factors, including the difficulty of manufacturing control, the emergence of new systematic variation-generating mechanisms, and most importantly, the increase in atomic-scale randomness, where device operation must be described as a stochastic process. In addition to wide-sense stationary stochastic device variability and temperature variation, existence of non-stationary stochastic electrical noise associated with fundamental processes in integrated-circuit devices represents an elementary limit on the performance of electronic circuits. In an attempt to address these issues, Stochastic Process Variation in Deep-Submicron CMOS: Circuits and Algorithms offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit level, architecture level and system level. It therefore provides a broad view on the various solutions that have to be used and their possible combination in very effective complementary techniques for both analog/mixed-signal and digital circuits. The feasibility of the described algorithms and built-in circuitry has been verified by measurements from the silicon prototypes fabricated in standard 90 nm and 65 nm CMOS technology.
Text of Note
Random Process Variation in Deep-Submicron CMOS -- Electronic Noise in Deep-Submicron CMOS -- Temperature Effects in Deep-Submicron CMOS -- Circuit Solutions -- Conclusions and Recommendations.
SERIES
Title
Springer series in advanced microelectronics
Volume Number
v.48
TOPICAL NAME USED AS SUBJECT
Metal oxide semiconductors, Complementary, Mathematical models
Stochastic processes
Physics
Electronic Circuits and Devices
Circuits and Systems
Statistical Physics, Dynamical Systems and Complexity
Appl.Mathematics/Computational Methods of Engineering
Physiological, Cellular and Medical Topics
TECHNOLOGY & ENGINEERING / Mechanical, bisacsh
LIBRARY OF CONGRESS CLASSIFICATION
Class number
E-BOOK
PERSONAL NAME - SECONDARY RESPONSIBILITY
Zjajo, Amir
ORIGINATING SOURCE
Country
ایران
ELECTRONIC LOCATION AND ACCESS
Host name
9789400777804.pdf
Access number
عادی
Compression information
عادی
Date and Hour of Consultation and Access
9789400777804.pdf
Electronic Format Type
متن
old catalog
e
BL
1
a
Y
