Electronic properties of multilayers and low-dimensional semiconductor structures
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
Plenum Press
Date of Publication, Distribution, etc.
c1990
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xiii, 477 p. : ill
SERIES
Other Title Information
NATO ASI series. Series B, Physics
Other Title Information
v.231
GENERAL NOTES
Text of Note
Proceedings of a NATO Advanced Study Institute on Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures, held Sept. 11-22, 1989, at Chateau de Bonas, Castera-Verduzan, France
Text of Note
Published in cooperation with NATO Scientific Af
Text of Note
Includes bibliographical references and index
NOTES PERTAINING TO TITLE AND STATEMENT OF RESPONSIBILITY
Text of Note
edited by J.M. Chamberlain and L. Eaves and J.-C. Portal
ORIGINAL VERSION NOTE
Text of Note
1
TOPICAL NAME USED AS SUBJECT
Entry Element
، Semiconductors- Congresses
Entry Element
، Layer structure )Solids(- Congresses
Entry Element
، Tunneling )Physics(- Congresses
Entry Element
، Superlattices as materials- Congresses
LIBRARY OF CONGRESS CLASSIFICATION
Class number
QC
610
.
9
.
N3644
1989
PERSONAL NAME - PRIMARY RESPONSIBILITY
Entry Element
NATO Advanced Study Institute on Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures )9891 : Castera-Verduzan, France(