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عنوان
GaAs FET principles and technology
پدید آورنده
James V. DiLorenzo, editor in chief, Deen D. Khandelwal, associate editor
موضوع
، Field-effect transistors,، Gallium arsenide semiconductors
رده
TK
7871
.
95
.
G27
کتابخانه
Central Library and Documents Center of Industrial University of Khaje Nasiredin Toosi
محل استقرار
استان:
Tehran
ـ شهر:
Tehran
تماس با کتابخانه :
88881052
-
88881042
-
021
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
GaAs FET principles and technology
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Dedham, Mass
Name of Publisher, Distributor, etc.
Artech House
Date of Publication, Distribution, etc.
c1982
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
773 p. : ill.; 24 cm
GENERAL NOTES
Text of Note
Includes bibliographical references and index
NOTES PERTAINING TO TITLE AND STATEMENT OF RESPONSIBILITY
Text of Note
James V. DiLorenzo, editor in chief, Deen D. Khandelwal, associate editor
ORIGINAL VERSION NOTE
Text of Note
1
TOPICAL NAME USED AS SUBJECT
Entry Element
، Field-effect transistors
Entry Element
، Gallium arsenide semiconductors
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK
7871
.
95
.
G27
PERSONAL NAME - PRIMARY RESPONSIBILITY
Relator Code
TI
AU DiLorenzo, James V
AU Khandelwal, Deen D
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