عنوان

Growth, modeling and device implementation of pulsed laser-deposited thin films

Number

TLpq304487381

.Language of Text, Soundtrack etc

انگلیسی

Title Proper

Growth, modeling and device implementation of pulsed laser-deposited thin films

General Material Designation

[Thesis]

First Statement of Responsibility

M. H. Rahman

Subsequent Statement of Responsibility

A. Kumar

Name of Publisher, Distributor, etc.

University of South Alabama

Date of Publication, Distribution, etc.

1998

Specific Material Designation and Extent of Item

149

Dissertation or thesis details and type of degree

M.S.E.E.

Body granting the degree

University of South Alabama

Text preceding or following the note

1998

Text of Note

The purpose of this research investigation is to fabricate the ferroelectric thin film capacitors by laser ablation and Sol-Gel methods. Barium strontium titanate (Ba{0.5}Sr{0.5}TiO3), lead zirconium titanate (Pb{0.5}Zr{0.5}Ti{0.48}O3), and strontium bismuth tantalate (SrBi2Ta2O9) have been used as ferroelectric materials, and strontium ruthenium oxide (SrRuO3) has been used as top and bottom electrodes. The conducting electrode, strontium ruthenium oxide (SrRuO3), has been chosen as electrode material because of its chemical and mechanical stability and very smooth interface with ferroelectric material. The PZT, SBT, and BST-based capacitors were deposited on different substrates, such as MgO(200), Pt/(100)Si, and r-sapphire. The structural characterizations of the capacitors were examined by x-ray diffraction technique. The electrical characterizations of the capacitors were assessed by the RT66A Standardized Ferroelectric Test System. The PZT capacitors proved to be very reliable in terms of not losing much switched charge after a large number of repetitive polarization reversals (10 cycles) and being able to maintain their charge over long waiting periods (10 seconds) between a write and subsequent read pulse. On the other hand, SBT capacitors have been found to have better long-term properties than PZT capacitors. The BST-based capacitors show reasonable dielectric constants and, thus, have been proven to be very reliable memory devices. The Sol-Gel process has also been used to fabricate PZT capacitors, and the results have been compared to the capacitors made by the PLD method. The capacitors made by Sol-Gel process showed better long-term properties than those made by the PLD process.

Applied sciences

Electrical engineering

A. Kumar

M. H. Rahman

Electronic name

p

[Thesis]

276903

a

Y