عنوان

MOCVD-grown visible light-emitting devices using native oxides of compound semiconductors

Number

TLpq304282876

.Language of Text, Soundtrack etc

انگلیسی

Title Proper

MOCVD-grown visible light-emitting devices using native oxides of compound semiconductors

General Material Designation

[Thesis]

First Statement of Responsibility

M. R. Islam

Subsequent Statement of Responsibility

R. D. Dupuis

Name of Publisher, Distributor, etc.

The University of Texas at Austin

Date of Publication, Distribution, etc.

1996

Specific Material Designation and Extent of Item

100

Dissertation or thesis details and type of degree

Ph.D.

Body granting the degree

The University of Texas at Austin

Text preceding or following the note

1996

Text of Note

Visible light emitting devices based on the InAlGaP material system are of great technological interest because of their applications in optical information processing such as high-definition television (HDTV) and plastic-fiber-based telecommunication. The high-power performance of these devices are limited by the low conduction-band offset available in this material system. A novel distributed electron wave reflector in the form of an InAlP/InGaP strain modulated aperidic superlattice heterobarrier (SMASH) structure has been proposed and shown to effectively increase the electron confinining potential. InAlP/InGaP light-emitting diodes using the SMASH barrier exhibited enhanced light output compared to similar devices utilizing other conventional barrier structures. The effects of the native oxides of compound semiconductors on the electrical and optical properties of light-emitting materials and devices were also studied. Thermally grown native oxides of Al-rich compound semiconductors are similar in nature to SiO2 and is formed in much the same way. Their insulating properties and low index of refraction (n 1.6) have made them useful for electrical and optical confinement in various light emitting device structures. The native oxides derived from InAlP and AlGaAs were compared in terms of their effect on the luminescence properties of InGaP and GaAs. Extensive photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements indicated that a "phosphorus" oxide (derived from InAlP) possibly has a superior interface quality compared to an "arsenic" oxide such as resulting from the oxidation of AlGaAs. Lasing action was demonstrated in an undoped, photopumped vertical-cavity InAlP/InGaP structure employing the SMASH barrier and the native oxide/semiconductor DBR mirrors.

Applied sciences

Electrical engineering

indium gallium aluminum phosphide

Materials science

M. R. Islam

R. D. Dupuis

Electronic name

p

[Thesis]

276903

a

Y