عنوان

Simulation of high-frequency semiconductor devices using a full electromagnetic wave model

Number

TLpq304168602

.Language of Text, Soundtrack etc

انگلیسی

Title Proper

Simulation of high-frequency semiconductor devices using a full electromagnetic wave model

General Material Designation

[Thesis]

First Statement of Responsibility

M. A.-A. Al-Sunaidi

Name of Publisher, Distributor, etc.

Arizona State University

Date of Publication, Distribution, etc.

1995

Specific Material Designation and Extent of Item

154

Dissertation or thesis details and type of degree

Ph.D.

Body granting the degree

Arizona State University

Text preceding or following the note

1995

Text of Note

Modern microwave device technology aims at the realization of smaller and faster circuits. As the device size shrinks, the transit time of the carriers becomes comparable to the characteristic relaxation times and to the period of the electromagnetic (EM) wave propagating along the device width. In order to incorporate the short-gate effects and the EM wave effects, a full-wave methodology is needed to include and account for device-wave interactions. The full-wave model couples three-dimensional solutions of the electric and magnetic fields to a self-consistent electron transport model which is based on the hydrodynamic equations. In this dissertation, the numerical solution methods are based on the finite-difference (FD) formulations. To overcome the computational intensity of the full-wave model, parallel algorithms were developed, and the numerical simulations were performed on a massively parallel machine (MasPar). Successful numerical simulations of typical microwave GaAs metal-semiconductor field-effect transistors (MESFET) devices with 0.2 mum gate lengths were carried out using the full-wave model. The analysis is performed by following the propagation of the EM wave inside the device and its interactions with the conduction electrons. The results show that electron-wave interactions take place along the width of the device. These effects are demonstrated for the first time in a microwave transistor. The interactions are present as nonlinear energy build-ups along the propagation direction as energy exchange takes place between the electrons and the propagating wave. It is found that the wave effects have a great impact on the behavior of the device. The results of this research present an important contribution to both device optimization and monolithic microwave integrated circuit (MMIC) system design.

Applied sciences

Electrical engineering

microwaves

M. A.-A. Al-Sunaidi

Electronic name

p

[Thesis]

276903

a

Y