عنوان

Video BiCMOS sampling systems

Number

TLpq303913308

.Language of Text, Soundtrack etc

انگلیسی

Title Proper

Video BiCMOS sampling systems

General Material Designation

[Thesis]

First Statement of Responsibility

M. R. Nayebi

Subsequent Statement of Responsibility

B. A. Wooley

Name of Publisher, Distributor, etc.

Stanford University

Date of Publication, Distribution, etc.

1990

Specific Material Designation and Extent of Item

156

Dissertation or thesis details and type of degree

Ph.D.

Body granting the degree

Stanford University

Text preceding or following the note

1990

Text of Note

This research explores the use of novel circuit techniques and BiCMOS technology to realize the essential components of high-speed/high-resolution sampling systems, including a video track-and-hold circuit and fast edge transition switch driver. Integration of such systems in a state-of-the-art BiCMOS VLSI technology avoids the high parasitics associated with traditional high-voltage analog technologies so as to achieve higher frequency response and provide the flexibility of integrating the sampling system together with digital VLSI circuits on the same chip. In the past, the use of BiCMOS technology has been focused extensively on VLSI digital functions such as high-speed memory (SRAMs) and low-power, high-speed gate-arrays and standard cells. This investigation explores the potential of digital BiCMOS technology for implementing video-speed analog circuits previously available only in hybrid and modular technologies. The results reported here serve as a foundation for introducing a less expensive and more reliable substitute for those technologies while improving the functional density. A video BiCMOS track-and-hold circuit that has been designed and fabricated in a 1.2 mum SRAM technology settles to 10-bit accuracy in 15 nsec. Using a novel bootstrapping technique, a BiCMOS switch driver was also designed and fabricated; this circuit is capable of turning on and off a large MOS switch with equivalent gate capacitance of 2 pF in only 1.5 nsec. These components surpass the performance of previous monolithic implementations by nearly two orders of magnitude.

Applied sciences

Electrical engineering

B. A. Wooley

M. R. Nayebi

Electronic name

p

[Thesis]

276903

a

Y