Özgün yöntemler ile perovskit ince filmlerin imalatı ve karakterizasyonu
General Material Designation
[Thesis]
First Statement of Responsibility
Bıyıklı, Ozan
Subsequent Statement of Responsibility
Sarı, Emre
.PUBLICATION, DISTRIBUTION, ETC
Name of Publisher, Distributor, etc.
Izmir Institute of Technology (Turkey)
Date of Publication, Distribution, etc.
2020
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
85
DISSERTATION (THESIS) NOTE
Dissertation or thesis details and type of degree
Master's
Body granting the degree
Izmir Institute of Technology (Turkey)
Text preceding or following the note
2020
SUMMARY OR ABSTRACT
Text of Note
Perovskite photovoltaics is a promising technology due to its low-cost fabrication and high efficiency. Since their first demonstration in 2009, efficiencies of perovskite solar cells (PSCs) increased unprecedently fast from 3.81% to 25.2% in 10 years. The most common method for the deposition of the absorber layer of the perovskite solar cells is the spin-coating method, which is not a scalable method, and this method is an obstacle to their commercialization. Efficiencies obtained with scalable methods are currently lower than that of the spin-coating method. In this thesis, among the scalable deposition methods, a novel ultrasonic spray-coating was used by adding antisolvent vapor to the system. The antisolvent quenching technique, that is commonly used to improve the crystalline quality of the film by spin-coating was successfully adapted for ultrasonic spray coating. The interaction between diethyl ether (DE) vapor, which is used as an antisolvent, and MAPb(I(3-x)Brx)3 precursor solution (where the solvent is DMF:DMSO, 4:1) was utilized to improve the crystalline quality of the perovskite film. As a result of this interaction, the intermediate phase was observed. The transition to the intermediate phase is supported by data from characterization methods such as optical microscopy, scanning electron microscopy (SEM), X-Ray diffraction (XRD), and current-voltage measurement. Furthermore, n-i-p devices with the FTO/c-TiO2/m-TiO2/MAPb(I(1-x)Brx)3/Spiro-OMeTAD architecture were produced with different antisolvent vapors and their efficiencies was compared. It was observed that devices using DE vapor reach higher efficiencies than devices without any antisolvent vapor.