عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
NATIONAL BIBLIOGRAPHY NUMBER
Number
TL53464
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Experimental Investigation of Low-Voltage Silicon Carbide (SiC) Semiconductor Devices for Power Conversion Applications
General Material Designation
[Thesis]
First Statement of Responsibility
Alharbi, Saleh Salem H.
Subsequent Statement of Responsibility
Matin, Mohammad
.PUBLICATION, DISTRIBUTION, ETC
Name of Publisher, Distributor, etc.
University of Denver
Date of Publication, Distribution, etc.
2020
GENERAL NOTES
Text of Note
145 p.
DISSERTATION (THESIS) NOTE
Dissertation or thesis details and type of degree
Ph.D.
Body granting the degree
University of Denver
Text preceding or following the note
2020
SUMMARY OR ABSTRACT
Text of Note
Enhancing the performance and efficiency of power converter systems requires fast-switching power devices with considerably low switching and conduction losses. Silicon (Si) semiconductor devices are the essential components in electronic converter designs, and their behaviors and switching characteristics determine the system's overall performance and efficiency. These conventional Si devices are nearing to hit their physical and operational limits in meeting power converter requirements with respect to high temperature and large voltage conditions. However, silicon carbide (SiC) power devices enable greater converter efficiency and better power density, particularly under hard switching frequencies and high output voltages due to their outstanding material properties, including lower on-state resistance, higher electric field, and wider energy bandgap. This research focuses on emerging SiC semiconductor devices in dc-dc electronic converters to maximize system efficiencies, improve power densities, and overcome the existing limitations of Si technology. The aim of this research is to examine switching behaviors of SiC-based semiconductors, especially at a 650 V blocking voltage range, and to demonstrate their impact on power converter performance. This experimental research investigates and compares the device behaviors of the SiC cascode JFET and SiC MOSFET with Si IGBT and Si MOSFET devices at a similar voltage and current ratings. The switching behaviors of each device technologies are demonstrated at different parameters, and the switching energy losses under various voltages and currents are experimentally evaluated in detail using a double-pulse test (DPT). The switching voltage and current derivatives for each transistor are illustrated as well. Finally, SiC-based converters are examined at different frequency levels, input voltages, and load conditions to fully test and explore the converter design with SiC diodes and transistors with respect to semiconductor loss, overall efficiency, and converter size and cost. Thus, this research will validate the superior switching performance of 650 V SiC power devices and show significantly improved overall efficiency in the SiC-based converters.
UNCONTROLLED SUBJECT TERMS
Subject Term
Electrical engineering
Subject Term
Energy
PERSONAL NAME - PRIMARY RESPONSIBILITY
Alharbi, Saleh Salem H.
PERSONAL NAME - SECONDARY RESPONSIBILITY
Matin, Mohammad
CORPORATE BODY NAME - SECONDARY RESPONSIBILITY
University of Denver
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب p
[Thesis]
276903
a
Y
