Prentice Hall series in solid state physical electronics
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
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Includes bibliographical references and index.
CONTENTS NOTE
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Crystal properties and growth of semiconductors -- Atoms and electrons -- Energy bands and charge carriers in semiconductors -- Excess carriers in semiconductors -- Junctions -- Field-effect transistors -- Bipolar junction transistors -- Optoelectronic devices -- Integrated circuits -- High-frequency and high-power devices -- App. I. Definitions of commonly used symbols -- App. II. Physical constants and conversion factors -- App. III. Properties of semiconductor materials -- App. IV. Derivation of the density of states in the conduction band -- App. V. Derivation of Fermi-Dirac statistics -- App. VI. Dry and wet thermal oxide thickness grown on Si (100) as a function of time and temperature -- App. VII. Solid solubilities of impurities in Si -- App. VIII. Diffusivities of dopants in Si and SiO[subscript 2] -- App. IX. Projected range and straggle as function of implant energy in Si.
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SUMMARY OR ABSTRACT
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"Solid State Electronic Devices is an introductory book on semiconductor materials, physics, devices, and technology. Now in its sixth edition, the book retains the two basic goals that have helped to make it so successful: 1) develop the basic semiconductor physics concepts to understand current and future devices and 2) provide a sound understanding of semiconductor devices and technology so that that their applications to electronic and optoelectronic circuits and systems can be appreciated."--Jacket.