Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials; Contents; Series Preface; Preface; Acknowledgements; List of Contributors; 1 Introduction to Liquid Phase Epitaxy; 2 Liquid Phase Epitaxy in Russia Prior to 1990; 3 Phase Diagrams and Modeling in Liquid Phase Epitaxy; 4 Equipment and Instrumentation for Liquid Phase Epitaxy; 5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy; 6 Liquid Phase Epitaxy of Silicon Carbide; 7 Liquid Phase Epitaxy of Gallium Nitride; 8 Liquid Phase Epitaxy of Quantum Wells and Quantum Dots.
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SUMMARY OR ABSTRACT
Text of Note
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and si.
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Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002.
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Wiley InterScience
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10.1002/9780470319505
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Title
Liquid phase epitaxy of electronic, optical, and optoelectronic materials.