Series on advances in mathematics for applied sciences ;
Volume Designation
v. 70
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references (pages 217-223) and index.
CONTENTS NOTE
Text of Note
Preface; Contents; 1. Introduction; 2. The Bloch-Boltzmann-Peierls Equations; 3. Multigroup Model Equations for Polar Semiconductors; 4. Particle Transport in Indium Phosphide; 5. Particle Transport in Gallium Arsenide; 6. Multigroup Equations for Degenerated Carrier Gases; 7. The Two-dimensional Electron Gas; 8. The Multigroup-WENO Solver for Semiconductor Device Simulation; 9. Simulation of Silicon Devices; 10. Simulation of Gallium Arsenide Devices; 11. Conclusion; Bibliography; Related Publications of the Author; Index.
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SUMMARY OR ABSTRACT
Text of Note
Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors and semiconductor devices. High-field effects as well as hot-phonon phenomena in polar semiconductors are studied in detail. The mathematical properties of the presented numerical method are studied, and the method is applied to simulating the transport of a two-dimensional electron gas formed at a s.
OTHER EDITION IN ANOTHER MEDIUM
Title
Multigroup equations for the description of the particle transport in semiconductors.