عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
NATIONAL BIBLIOGRAPHY NUMBER
Number
LA5kv6j5dt
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells
General Material Designation
[Article]
First Statement of Responsibility
Hestroffer, K.Wu, F.Li, H.Lund, C.Keller, S.Speck, J. S.Mishra, U. K.
SET
Date of Publication
2015
Title
UC Office of the President
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب [Article]
277261
a
Y
