عنوان

Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications

Number

LA30p742jd

Title Proper

Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications

General Material Designation

[Article]

First Statement of Responsibility

Cao, Y.Zhang, J.Li, X.Kosel, T.H.Fay, P.Hall, D.C.Zhang, X.B.Dupuis, R.D.Jasinski, J.B.Liliental-Weber, Z.

Text of Note

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

Date of Publication

2004

Electronic name

[Article]

276997

a

Y