عنوان

Doping in Zinc Oxide Thin Films

Number

TL9sq5q4q3

.Language of Text, Soundtrack etc

انگلیسی

Title Proper

Doping in Zinc Oxide Thin Films

General Material Designation

[Thesis]

First Statement of Responsibility

Yang, Zheng

Subsequent Statement of Responsibility

Liu, Jianlin

Date of Publication, Distribution, etc.

2009

Body granting the degree

Liu, Jianlin

Text preceding or following the note

2009

Text of Note

Doping in zinc oxide (ZnO) thin films were discussed in this dissertation.The optimizations of undoped ZnO thin film growth using molecular-beam epitaxy (MBE) were discussed. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concentration, larger resistivity, and smaller density of non-radiative luminescence centers in the ZnO thin films. Low-temperature photoluminescence (PL) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8 × 1018 to 1.8 ×1020 cm-3, the dominant PL line at 9 K changes from I1 (3.368 - 3.371 eV), to IDA (3.317 -3.321 eV), and finally to I8 (3.359 eV). The dominance of I1, due to ionized-donor bound excitons, is unexpected in n-type samples, but is shown to be consistent with the temperature-dependent Hall fitting results. We also show that IDA has characteristics of a donor-acceptor-pair transition, and use a detailed, quantitative analysis to argue that it arises from GaZn donors paired with Zn-vacancy (VZn) acceptors. In this analysis, the GaZn0/+ energy is well-known from two-electron satellite transitions, and the VZn0/- energy is taken from a recent theoretical calculation. Typical behaviors of Sb-doped p-type ZnO were presented. The Sb doping mechanisms and preference in ZnO were discussed. Diluted magnetic semiconducting ZnO:Co thin films with above room-temperature TC were prepared. Transmission electron microscopy and x-ray diffraction studies indicate the ZnO:Co thin films are free of secondary phases. The magnetization of the ZnO:Co thin films shows a free electron carrier concentration dependence, which increases dramatically when the free electron carrier concentration exceeds ~1019 cm-3, indicating a carrier-mediated mechanism for ferromagnetism. The anomalous Hall effect is observed in the ZnO:Co thin films. The anomalous Hall coefficient and its dependence on longitudinal resistivity were analyzed. The presence of a side-jump contribution further supports an intrinsic origin for ferromagnetism in ZnO:Co thin films. These observations together with the magnetic anisotropy and magnetoresistance results, supports an intrinsic carrier-mediated mechanism for ferromagnetic exchange in ZnO:Co diluted magnetic semiconductor materials. Well-above room temperature and electron-concentration dependent ferromagnetism was observed in n-type ZnO:Mn films, indicating long-range ferromagnetic order. Magnetic anisotropy was also observed in these ZnO:Mn films, which is another indication for intrinsic ferromagnetism. The electron-mediated ferromagnetism in n-type ZnO:Mn contradicts the existing theory that the magnetic exchange in ZnO:Mn materials is mediated by holes. Microstructural studies using transmission electron microscopy were performed on a ZnO:Mn diluted magnetic semiconductor thin film. The high-resolution imaging and electron diffraction reveal that the ZnO:Mn thin film has a high structual quality and is free of clustering/segregated phases. High-angle annular dark field imaging and x-ray diffraction patterns further support the absence of phase segregation in the film. Magnetotransport was studied on the ZnO:Mn samples, and from these measurements, the temperature dependence of the resistivity and magnetoresistance, electron carrier concentration, and anomalous Hall coefficient of the sample is discussed. The anomalous Hall coefficient depends on the resistivity, and from this relation, the presence of the quadratic dependence term supports the intrinsic spin-obit origin of the anomalous Hall effect in the ZnO:Mn thin film.

Bobadilla, Selene

Yang, Zheng

UC Riverside

Electronic name

p

[Thesis]

276903

a

Y