عنوان

III-V semiconductor nanowire lasers on silicon

Number

TL2sv8m0b7

.Language of Text, Soundtrack etc

انگلیسی

Title Proper

III-V semiconductor nanowire lasers on silicon

General Material Designation

[Thesis]

First Statement of Responsibility

Kim, Hyunseok

Subsequent Statement of Responsibility

Huffaker, Diana L

Date of Publication, Distribution, etc.

2018

Body granting the degree

Huffaker, Diana L

Text preceding or following the note

2018

Text of Note

Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and capability to grow directly on lattice-mismatched substrates including silicon. However, their practical applications are still in the early stages due to the difficulties in achieving high-performance nanowire emitters and integrating nanowire emitters with photonic platforms. In this dissertation, we demonstrate III-V nanowire-based lasers monolithically integrated on silicon-on-insulator (SOI) platforms, which can be potentially employed for chip-scale optical communications and photonic integrated circuits. For this, selective-area epitaxy of InGaAs nanowires on 3D structured SOI platforms is developed by catalyst-free metal-organic chemical vapor deposition. Nanowires are precisely positioned on 3D structures, including waveguides and gratings, with nearly 100 % nanowire growth yield and wide bandgap tuning ranges. Next, nanowire array-based bottom-up photonic crystal cavities are demonstrated on SOI substrates. InGaAs/InGaP core/shell nanowire arrays form 1D and 2D photonic crystal cavities on SOI layers, and single-mode room-temperature lasing from these bottom-up cavities is achieved by optically pumping the nanowire arrays. We also show that the nanowire array lasers are effectively coupled with SOI waveguides, which is achieved by integrating bottom-up nanowires on pre-patterned SOI platforms. The lasing wavelengths of nanowire array lasers are in the ranges of 1,100-1,440 nm, which covers telecommunication wavelengths, all operating at room temperature. It is also shown that arrays of proposed lasers with individually tunable wavelengths can be integrated on a single chip by lithographically tuning the cavity geometries. In summary, the III-V nanowire lasers on silicon demonstrated in this dissertation represent a new platform for ultracompact and energy-efficient light sources for silicon photonics and unambiguously point the way toward practical and functional nanowire lasers.

Pressel, Kyle Gregory

Kim, Hyunseok

UCLA

Electronic name

p

[Thesis]

276903

a

Y