عنوان
پدید آورنده
موضوع
رده
TK5105.5
TK5105
.
5
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
9789811334498
(Number (ISBN
9789811334504
(Number (ISBN
9789811334511
(Number (ISBN
9811334498
(Number (ISBN
9811334501
(Number (ISBN
981133451X
Erroneous ISBN
9789811334498
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Advances in Communication, Devices and Networking :
General Material Designation
[Book]
Other Title Information
Proceedings of ICCDN 2018 /
First Statement of Responsibility
Rabindranath Bera, Subir Kumar Sarkar, Om Prakash Singh, Hemanta Saikia, editors.
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Singapore :
Name of Publisher, Distributor, etc.
Springer,
Date of Publication, Distribution, etc.
2019.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
1 online resource
SERIES
Series Title
Lecture notes in electrical engineering ;
Volume Designation
537
CONTENTS NOTE
Text of Note
Intro; Organizing Committee; Chief Patron; Patron; General Chair; International Advisory Committee; National Advisory Committee; Technical Programme Committee; Convener; Co-conveners; Preface; Contents; About the Editors; A Simple VIS-NIR LED-Based Model for Estimation of Plant Chlorophyll; 1 Introduction; 2 Materials and Methods; 2.1 Single-Leaf Method; 2.2 Spectrophotometer Method; 2.3 Design of the System; 3 Results and Discussion; 3.1 Comparison of SRVI for Different Methods; 4 Conclusion; References; A Novel High-Performance Leakage-Tolerant Keeper Domino Circuit for Wide Fan-In Gates
Text of Note
1 Introduction2 Power Consumption; 3 Leakage-Controlled Keeper; 4 Simulation and Result; 5 Conclusion; References; Drain-Doping Engineering and its Influence on Device Output Characteristics and Ambipolar Conduction on a Splitted-Drain TFET Model; 1 Introduction; 2 Device Structure and Parameters; 3 Simulation Setup; 4 Results and Discussion; 4.1 Drain Output Characteristics; 4.2 Optimization of Ambipolar Conductivity; 5 Conclusion; References; Implementation of a Doped Pocket Region in Order to Enhance the Device Performance of MOSFET; 1 Introduction; 2 Device Structure and Simulation Setup
Text of Note
2 Model Derivation3 Model Verification and Discussions; 4 Conclusion; References; Analytical Modeling of Surface Potential for Double-Gate MOSFET; 1 Introduction; 2 Double-Gate MOSFET; 3 Derivation of Surface Potential of Double-Gate MOSFET; 4 Results and Discussions; 5 Conclusion; References; Grid Impedance Measurement in Low-Voltage Network; 1 Introduction; 2 Proposed Method; 3 Results and Discussion; 4 Conclusions; References; Fault Localization on the Transmission Line Using FDOST and RBFNN; 1 Introduction; 2 Fast Discrete Orthogonal Stockwell Transform
Text of Note
2.1 Fabrication Steps2.2 Simulation Setup; 3 Results and Discussions; 3.1 Drain Biasing; 3.2 Gate Biasing; 3.3 Comparison of Conventional MOSFET and Proposed MOSFET; 4 Conclusion; References; Design of Digital-to-Analog Converter Using Dual Pair Differential Amplifier in 180 nm CMOS Technology; 1 Introduction; 2 System Architecture; 2.1 Current Source; 2.2 Switch Driver; 2.3 Gilbert Cell Design; 2.4 Rail-to-Rail Operation; 3 simulation results; 4 Conclusion; References; An Analytical Surface Potential Model for Highly Doped Ultrashort Asymmetric Junctionless Transistor; 1 Introduction
Text of Note
3 Radial Basis Function Neural Network (RBFNN)4 System Description and Fault Simulation; 5 Feature Extraction and Fault Localization; 6 Result and Analysis; 7 Conclusion; References; Low-Voltage Hardware-in-Loop Test Model Using Real-Time Digital Simulator for Single-Phase Converter; 1 Introduction; 2 Review Work; 3 Materials and Methods; 3.1 Block Schematic of Proposed HIL; 3.2 Mathematical Model of Boost Converter; 3.3 Converters-RTDS Interfacing at Low Voltage Level; 4 Experimentation; 4.1 Duty Cycle Controller Using TL494; 4.2 HIL Test of the Boost Converter
0
8
8
8
8
SUMMARY OR ABSTRACT
Text of Note
The book covers recent trends in the field of devices, wireless communication and networking. It presents the outcomes of the International Conference in Communication, Devices and Networking (ICCDN 2018), which was organized by the Department of Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Sikkim, India on 2-3 June, 2018. Gathering cutting-edge research papers prepared by researchers, engineers and industry professionals, it will help young and experienced scientists and developers alike to explore new perspectives, and offer them inspirations on addressing real-world problems in the field of electronics, communication, devices and networking.
ACQUISITION INFORMATION NOTE
Source for Acquisition/Subscription Address
Springer Nature
Stock Number
com.springer.onix.9789811334504
OTHER EDITION IN ANOTHER MEDIUM
International Standard Book Number
9789811334498
International Standard Book Number
9789811334511
PARALLEL TITLE PROPER
Parallel Title
ICCDN 2018
TOPICAL NAME USED AS SUBJECT
Computer networks, Congresses.
Wireless communication systems, Congresses.
Computer networks.
COMPUTERS-- Computer Literacy.
COMPUTERS-- Computer Science.
COMPUTERS-- Data Processing.
COMPUTERS-- Hardware-- General.
COMPUTERS-- Information Technology.
COMPUTERS-- Machine Theory.
COMPUTERS-- Reference.
Wireless communication systems.
(SUBJECT CATEGORY (Provisional
COM-- 013000
COM-- 014000
COM-- 018000
COM-- 032000
COM-- 037000
COM-- 052000
COM-- 067000
TJK
TJK
DEWEY DECIMAL CLASSIFICATION
Number
004
.
6
Edition
23
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK5105
.
5
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
Bera, Rabinnath.
Saikia, Hemanta.
Sarkar, Subir Kumar.
Singh, Om Prakash.
CORPORATE BODY NAME - PRIMARY RESPONSIBILITY
International Conference on Communication, Devices and Networking(2nd :2018 :, Majitar, Sikkim, India)
ORIGINATING SOURCE
Date of Transaction
20200823234401.0
Cataloguing Rules (Descriptive Conventions))
pn
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب [Book]
Y
