عنوان

Radiation hardened CMOS integrated circuits for time-based signal processing /

(Number (ISBN

3319786164

(Number (ISBN

9783319786162

Erroneous ISBN

3319786156

Erroneous ISBN

9783319786155

Title Proper

Radiation hardened CMOS integrated circuits for time-based signal processing /

General Material Designation

[Book]

First Statement of Responsibility

Jeffrey Prinzie, Michiel Steyaert, Paul Leroux.

Place of Publication, Distribution, etc.

Cham, Switzerland :

Name of Publisher, Distributor, etc.

Springer,

Date of Publication, Distribution, etc.

2018.

Specific Material Designation and Extent of Item

1 online resource

Series Title

Analog circuits and signal processing,

ISSN of Series

1872-082X

Text of Note

Includes bibliographical references and index.

Text of Note

Intro; Preface; Contents; List of Abbreviations and Symbols; Abbreviations; Symbols; List of Figures; List of Tables; 1 Radiation Effects in CMOS Technology; 1.1 Radiation and Its Interaction with Matter; 1.1.1 Direct Ionization; 1.1.2 Electromagnetic Radiation; 1.1.3 Neutrons; 1.1.4 Effects on Semiconductors; 1.2 Total Ionizing Dose Effects; 1.2.1 Basic Charge Trapping in CMOS Transistors; 1.2.2 Narrow Channel Transistors; 1.2.3 Short Channel Transistors; 1.2.4 Enclosed Layout Transistors; 1.2.5 Experimental Results; 1.3 Single-Event Effects; 1.3.1 Basic Mechanism.

Text of Note

1.3.2 Effect on nmos and pmos Devices1.3.3 SET, SEU, SEL; 1.3.4 SEU Mitigation Techniques in Digital Blocks; 1.3.5 Charge Sharing; 1.4 Simulation Methods to Simulate Radiation Effects; 1.4.1 Simulation of TID Effects on Circuits; 1.4.2 Simulation of Single-Event Effects on Circuits; 1.5 Conclusion; 2 Time-Domain Signal Processing; 2.1 Introduction; 2.2 Time-to-Digital Converters; 2.3 Applications of Time-Based Circuits; 2.3.1 High-Energy Physics; 2.3.2 PET Scanners; 2.3.3 Time-of-Flight LIDAR; 2.3.4 All-Digital PLLs; 2.4 TDC Circuits; 2.4.1 Performance Parameters.

Text of Note

2.4.1.1 Single-Shot Precision2.4.1.2 Linearity; 2.4.1.3 Gain Error; 2.4.1.4 Conversion Speed; 2.4.2 Delay-Line Based TDCs; 2.4.3 Sub-gate Delay-Line TDCs; 2.4.3.1 Vernier Architecture; 2.4.3.2 Local Phase Interpolation; 2.4.3.3 Parallel TDCs; 2.4.4 Delay-Locked Loops; 2.4.5 Multi-Stage TDCs; 2.4.5.1 Coarse-Fine TDCs; 2.4.5.2 Pipelined TDCs; 2.4.6 Looped TDCs; 2.4.7 Oversampling TDCs; 2.4.7.1 Gated Ring-Oscillator; 2.4.8 Other TDC Architectures; 2.4.8.1 Stochastic TDCs; 2.4.8.2 Wave Union Launcher; 2.4.9 Input Path; 2.5 Conclusion; 3 Clock Synthesizers; 3.1 Introduction; 3.2 Phase Locked Loops.

Text of Note

3.2.1 Phase-Domain Model3.2.2 Components for Charge-Pump PLLs; 3.2.2.1 Phase Detector; 3.2.2.2 Phase-Frequency Detector; 3.2.2.3 Bang-Bang Phase Detector; 3.2.2.4 Charge-Pump: Loop Filter; 3.2.2.5 Divider; 3.3 Oscillators; 3.3.1 Oscillation Criteria; 3.3.2 LC-Oscillators; 3.3.3 Ring-Oscillators; 3.4 Jitter and Phase-Noise; 3.4.1 Definitions; 3.4.2 Phase Noise in LC-Tank Oscillators; 3.4.2.1 Linear Calculation; 3.4.2.2 Impulse Sensitive Function; 3.4.3 Phase Noise Spectrum of an Oscillator; 3.5 Phase-Noise in PLLs; 3.5.1 Noise Transfer Function; 3.5.2 Reference Clock Phase Noise.

Text of Note

3.5.3 Charge-Pump: Loop Filter3.5.4 Oscillator; 3.5.5 Spurious Tones; 3.6 Performance Parameters; 3.7 Conclusion; 4 Single Shot Time-to-Digital Converters; 4.1 Introduction; 4.2 TDC System Level Architecture; 4.2.1 Self-Calibration Loop Implemented by a DLL; 4.2.2 System Architecture with Double Phase Detector; 4.2.3 TDC Timing Generator Linearity; 4.2.4 Channeling and Basic Readout Interfaces; 4.3 Low Offset Bang-Bang Phase Detector; 4.3.1 Origin of Static Phase Offsets; 4.3.2 Removing Static Phase Offsets; 4.3.3 Circuit Implementations; 4.4 Experimental Results; 4.5 Conclusion.

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Text of Note

This book presents state-of-the-art techniques for radiation hardened high-resolution Time-to-Digital converters and low noise frequency synthesizers. Throughout the book, advanced degradation mechanisms and error sources are discussed and several ways to prevent such errors are presented. An overview of the prerequisite physics of nuclear interactions is given that has been compiled in an easy to understand chapter. The book is structured in a way that different hardening techniques and solutions are supported by theory and experimental data with their various tradeoffs. Based on leading-edge research, conducted in collaboration between KU Leuven and CERN, the European Center for Nuclear Research Describes in detail advanced techniques to harden circuits against ionizing radiation Provides a practical way to learn and understand radiation effects in time-based circuits Includes an introduction to the underlying physics, circuit design, and advanced techniques accompanied with experimental data.

Source for Acquisition/Subscription Address

Springer Nature

Stock Number

com.springer.onix.9783319786162

Title

Radiation hardened CMOS integrated circuits for time-based signal processing.

International Standard Book Number

9783319786155

Integrated circuits.

Metal oxide semiconductors, Complementary.

Circuits & components.

Electronics engineering.

Imaging systems & technology.

Integrated circuits.

Metal oxide semiconductors, Complementary.

TECHNOLOGY & ENGINEERING-- Mechanical.

TEC-- 009070

TJFC

Number

Edition

Class number

Prinzie, Jeffrey

Leroux, Paul,1975-

Steyaert, Michiel,1959-

Date of Transaction

20200823113549.0

Cataloguing Rules (Descriptive Conventions))

pn

Electronic name

[Book]

Y