عنوان
پدید آورنده
موضوع
رده
TK7871.95
TK7871
.
95
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
3030045137
(Number (ISBN
3030045145
(Number (ISBN
9783030045135
(Number (ISBN
9783030045142
Erroneous ISBN
3030045129
Erroneous ISBN
9783030045128
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Device physics, modeling, technology, and analysis for silicon MESFET /
General Material Designation
[Book]
First Statement of Responsibility
Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry.
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Cham, Switzerland :
Name of Publisher, Distributor, etc.
Springer,
Date of Publication, Distribution, etc.
[2019]
Date of Publication, Distribution, etc.
©2019
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
1 online resource.
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index.
CONTENTS NOTE
Text of Note
Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits -- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET -- Chapter 3. Modeling of Classical SOI-MESFET -- Chapter 4. Design and modeling of triple-material gate SOI-MESFET -- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET -- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices -- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs).
0
SUMMARY OR ABSTRACT
Text of Note
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs.
ACQUISITION INFORMATION NOTE
Source for Acquisition/Subscription Address
Springer Nature
Stock Number
com.springer.onix.9783030045135
OTHER EDITION IN ANOTHER MEDIUM
International Standard Book Number
9783030045128
TOPICAL NAME USED AS SUBJECT
Metal semiconductor field-effect transistors-- Mathematical models.
Physics.
Metal semiconductor field-effect transistors-- Mathematical models.
Physics.
TECHNOLOGY & ENGINEERING / Mechanical.
(SUBJECT CATEGORY (Provisional
TEC-- 009070
TJFC
TJFC
DEWEY DECIMAL CLASSIFICATION
Number
621
.
3815284
Edition
23
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK7871
.
95
PERSONAL NAME - PRIMARY RESPONSIBILITY
Amiri, Iraj Sadegh,1977-
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
Hosseinghadiry, Mahdiar
Mohammadi, Hossein,1974-
ORIGINATING SOURCE
Date of Transaction
20200823080639.0
Cataloguing Rules (Descriptive Conventions))
pn
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب [Book]
Y
