Optoelectronic properties of semiconductors and superlattices ;
Volume Designation
volume 8
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index.
CONTENTS NOTE
Text of Note
Cover -- Half Title -- Title Page -- Copyright Page -- Contents -- About the Series -- Introduction -- 1 Theories of Band Structure and Optical Properties of Interdiffused Quantum Wells -- 2 Interdiffusion Mechanisms in III-V Materials -- 3 Interdiffusion in Lattice-Matched Quantum Wells and Self-Formed Quantum Dots Composed of III-V Semiconductors -- 4 Interdiffusion in Strained Layer InxGa1_xAs/GaAs Heterostructures -- 5 Strain in Interdiffused Ino.53Gao.47As/InP Quantum Wells -- 6 Photonic Integration Using Quantum Well Shape Modification Enhanced by Ion Implantation -- 7 Control of Layer Intermixing by Impurities and Defects -- 8 Quantum Wells Intermixing by Ion Implantation and Anodic Oxidation -- 9 Impurity-Free Vacancy Disordering of GaAs/AlGaAs Quantum Well Structures: Processing and Devices -- 10 Selective Interdiffusion of GaAs/AlGaAs Quantum Wells Through S i0 2 Encapsulation -- Comparison with the Ion Implantation Approach -- 11 Dependence of Dielectric Cap Quantum Well Disordering on the Characteristics of Dielectric Capping Film -- 12 Selective Area Disordering of Quantum Wells for Integrated All-Optical Devices -- 13 Polarization-Dependant Refractive-Index Change Induced by Superlattice Disordering and Its Applications -- 14 Broadspectrum InGaAs/InP Quantum Well Infrared Photodetector via Quantum Well Intermixing -- 15 Diffused Quantum Well Modulators -- 16 Analysis and Design of Semiconductor Lasers Using Diffused Quantum Wells Structure -- Index.