عنوان
پدید آورنده
موضوع
رده
QC611.6.M64
QC611
.
6
.
M64
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
1351076620
(Number (ISBN
1351085077
(Number (ISBN
1351093525
(Number (ISBN
1351101978
(Number (ISBN
9781351076623
(Number (ISBN
9781351085076
(Number (ISBN
9781351093521
(Number (ISBN
9781351101974
Erroneous ISBN
1315897520
Erroneous ISBN
9781315897523
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Silicon-molecular beam epitaxy.
General Material Designation
[Book]
First Statement of Responsibility
editors, Erich Kasper, John C. Bean.
Volume Designation
Volume II /
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Boca Raton, FL :
Name of Publisher, Distributor, etc.
CRC Press, Taylor & Francis Group,
Date of Publication, Distribution, etc.
[2018]
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
1 online resource
SERIES
Series Title
CRC revivals
GENERAL NOTES
Text of Note
Originally published 1988 by CRC Press.
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index.
CONTENTS NOTE
Text of Note
9. Principles of Heteroepitaxy 10. Epitaxial Silicides 11. Silicon-Based Semiconductor Heterostructures 12. Assessment of Layers 13. Industrial Application: Perspective and Requirements 14. Industrial Application: Possible Approaches 15. Molecular Beam Epitaxy of Silicon Materials: A Bibliography 1962 -- 1985.
0
SUMMARY OR ABSTRACT
Text of Note
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
ACQUISITION INFORMATION NOTE
Source for Acquisition/Subscription Address
Ingram Content Group
Stock Number
9781351093521
OTHER EDITION IN ANOTHER MEDIUM
International Standard Book Number
9781315897523
TOPICAL NAME USED AS SUBJECT
Molecular beam epitaxy.
Silicon.
Molecular beam epitaxy.
SCIENCE-- Physics-- Electricity.
SCIENCE-- Physics-- Electromagnetism.
Silicon.
(SUBJECT CATEGORY (Provisional
SCI-- 021000
SCI-- 022000
DEWEY DECIMAL CLASSIFICATION
Number
537
.
622
Edition
23
LIBRARY OF CONGRESS CLASSIFICATION
Class number
QC611
.
6
.
M64
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
Bean, John C., (John Condon),1950-
Kasper, Erich.
ORIGINATING SOURCE
Date of Transaction
20200822172933.0
Cataloguing Rules (Descriptive Conventions))
pn
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب [Book]
Y
