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عنوان
Design and Development of GaN-Based Vertical Transistors for Increased Power Density in Power Electronics Applications

پدید آورنده
Dong Ji

موضوع
Electrical engineering,Applied sciences;Cavet;Current aperture vertical electron transistor;Gallium nitride;Ogfet;Power transistor;Vertical transistor

رده

کتابخانه
Center and Library of Islamic Studies in European Languages

محل استقرار
استان: Qom ـ شهر: Qom

Center and Library of Islamic Studies in European Languages

تماس با کتابخانه : 32910706-025

NATIONAL BIBLIOGRAPHY NUMBER

Number
TL49823

LANGUAGE OF THE ITEM

.Language of Text, Soundtrack etc
انگلیسی

TITLE AND STATEMENT OF RESPONSIBILITY

Title Proper
Design and Development of GaN-Based Vertical Transistors for Increased Power Density in Power Electronics Applications
General Material Designation
[Thesis]
First Statement of Responsibility
Dong Ji
Subsequent Statement of Responsibility
Chowdhury, Srabanti

.PUBLICATION, DISTRIBUTION, ETC

Name of Publisher, Distributor, etc.
University of California, Davis
Date of Publication, Distribution, etc.
2017

PHYSICAL DESCRIPTION

Specific Material Designation and Extent of Item
155

GENERAL NOTES

Text of Note
Committee members: Islam, M. Saif; Luhmann, Neville C.

NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.

Text of Note
Place of publication: United States, Ann Arbor; ISBN=978-0-355-76428-4

DISSERTATION (THESIS) NOTE

Dissertation or thesis details and type of degree
Ph.D.
Discipline of degree
Electrical and Computer Engineering
Body granting the degree
University of California, Davis
Text preceding or following the note
2017

SUMMARY OR ABSTRACT

Text of Note
Gallium nitride (GaN)-based devices have entered the power electronics market and shown excellent progress in the medium power conversion applications. For power conversions applications > 10 kW, devices with vertical geometry are preferred over lateral geometry, since the former allows more current for a given chip area, thus provides a more economical solution for high-voltage and high-current applications. Moreover, the vertical geometry is attractive for its dispersion-free performance without passivation, a phenomenon that causes high dynamic on-state resistance (Ron) in lateral geometry high electron mobility transistors (HEMTs).

TOPICAL NAME USED AS SUBJECT

Electrical engineering

UNCONTROLLED SUBJECT TERMS

Subject Term
Applied sciences;Cavet;Current aperture vertical electron transistor;Gallium nitride;Ogfet;Power transistor;Vertical transistor

PERSONAL NAME - PRIMARY RESPONSIBILITY

Abraham, Monnie

PERSONAL NAME - SECONDARY RESPONSIBILITY

Chowdhury, Srabanti

CORPORATE BODY NAME - SECONDARY RESPONSIBILITY

Subdivision
Electrical and Computer Engineering
University of California, Davis

LOCATION AND CALL NUMBER

Call Number
2025922937; 10682425

ELECTRONIC LOCATION AND ACCESS

Electronic name
 مطالعه متن کتاب 

p

[Thesis]
276903

a
Y

Proposal/Bug Report

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