عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
NATIONAL BIBLIOGRAPHY NUMBER
Number
TL49243
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Engineering model of III-nitride power heterostructure field effect transistor on silicon substrate
General Material Designation
[Thesis]
First Statement of Responsibility
Mohammad Mirwazul Islam
Subsequent Statement of Responsibility
Simin, Grigory
.PUBLICATION, DISTRIBUTION, ETC
Name of Publisher, Distributor, etc.
University of South Carolina
Date of Publication, Distribution, etc.
2016
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
97
GENERAL NOTES
Text of Note
Committee members: Chandrashekhar, MVS; Khan, Jamil A.; Wang, Guoan
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Place of publication: United States, Ann Arbor; ISBN=978-1-369-56508-9
DISSERTATION (THESIS) NOTE
Dissertation or thesis details and type of degree
Ph.D.
Discipline of degree
Electrical Engineering
Body granting the degree
University of South Carolina
Text preceding or following the note
2016
SUMMARY OR ABSTRACT
Text of Note
In modern society, the demand for power consumption is increasing rapidly and the need of energy savings is now an issue of global importance. Highly efficient power converters and power conditioning systems operating with wide range of traditional as well as novel renewable and clean energy sources, are playing crucial role in energy saving. Si converters have already reached their limitation in terms of switching frequency and breakdown voltage/on-resistance ratio. Research is going on all around the world and it is now well accepted that significant improvement in power conversion efficiency and speed can only be achieved using beyond Si devices, such as SiC and GaN based. GaN based converters have shown great promises for higher conversion efficiency and switching speed. It is now crucial to develop accurate models that can assist in design and fabrication of GaN based power electronics.
TOPICAL NAME USED AS SUBJECT
Electrical engineering
UNCONTROLLED SUBJECT TERMS
Subject Term
Applied sciences;Bulk current;Current collapse;GaN model;HFET;Power switching
PERSONAL NAME - PRIMARY RESPONSIBILITY
Kohistany, M. Lyla
PERSONAL NAME - SECONDARY RESPONSIBILITY
Simin, Grigory
CORPORATE BODY NAME - SECONDARY RESPONSIBILITY
Subdivision
Electrical Engineering
University of South Carolina
LOCATION AND CALL NUMBER
Call Number
1874575553; 10240328
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب p
[Thesis]
276903
a
Y
