Ultra-thin quantum structures for deep ultraviolet photonic devices
General Material Designation
[Thesis]
First Statement of Responsibility
SM Moududul Islam
Subsequent Statement of Responsibility
Jena, Debdeep
.PUBLICATION, DISTRIBUTION, ETC
Name of Publisher, Distributor, etc.
University of Notre Dame
Date of Publication, Distribution, etc.
2016
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
205
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Place of publication: United States, Ann Arbor; ISBN=978-1-339-97936-6
DISSERTATION (THESIS) NOTE
Dissertation or thesis details and type of degree
Ph.D.
Body granting the degree
University of Notre Dame
Text preceding or following the note
2016
SUMMARY OR ABSTRACT
Text of Note
Semiconductor based deep ultraviolet (<280 nm) optoelectronics has versatile applications in current state of art industrial/research facility. But as shorter wavelengths are approached, a number of fundamental challenges are encountered which hinder the realization of energy efficient deep-UV optical emission. Though optical devices in the entire UV spectral window have been demonstrated by using III-N semiconductors and their alloys, the overall efficiency of such deep UV emitters is still well below 10%.
TOPICAL NAME USED AS SUBJECT
Electrical engineering; Theoretical physics
UNCONTROLLED SUBJECT TERMS
Subject Term
Pure sciences;Applied sciences;Deep ultra-violet;Ligh emitting diode;Molecular beam epitaxy;Quantum structures