Integrated Nanophotonic Silicon Devices for Next Generation Computing Chips
General Material Designation
[Thesis]
First Statement of Responsibility
Stevan Djordjevic
Subsequent Statement of Responsibility
Yoo, S. J. Ben
.PUBLICATION, DISTRIBUTION, ETC
Name of Publisher, Distributor, etc.
University of California, Davis
Date of Publication, Distribution, etc.
2014
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
201
GENERAL NOTES
Text of Note
Committee members: Akella, Venkatesh; Islam, M. Saiful
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Place of publication: United States, Ann Arbor; ISBN=978-1-321-36236-7
DISSERTATION (THESIS) NOTE
Dissertation or thesis details and type of degree
Ph.D.
Discipline of degree
Electrical and Computer Engineering
Body granting the degree
University of California, Davis
Text preceding or following the note
2014
SUMMARY OR ABSTRACT
Text of Note
Development of the computing platform of the future depends largely on high bandwidth interconnects at intra-die level. Silicon photonics, as an innately CMOS compatible technology, is a promising candidate for delivering terabit per second bandwidths through the use of wavelength division multiplex (WDM) signaling. Silicon photonic interconnects offer unmatched bandwidth, density, energy efficiency, latency and reach, compared with the electrical interconnects. WDM silicon photonic links are viewed today as a promising solution for resolving the inter/intra-chip communication bottlenecks for high performance computing systems.
TOPICAL NAME USED AS SUBJECT
Electrical engineering; Optics
UNCONTROLLED SUBJECT TERMS
Subject Term
Pure sciences;Applied sciences;Cmos photonics;Integrated photonics;Optical interconnects;Silicon photonics