عنوان

Heterogeneous Integration of III-V Semiconductor Compounds on Silicon for Functional Photonic Circuits

Number

TL48152

.Language of Text, Soundtrack etc

انگلیسی

Title Proper

Heterogeneous Integration of III-V Semiconductor Compounds on Silicon for Functional Photonic Circuits

General Material Designation

[Thesis]

General Material Designation

[Thesis]

General Material Designation

[Thesis]

General Material Designation

[Thesis]

First Statement of Responsibility

Stanley Cheung

Subsequent Statement of Responsibility

Yoo, S. J. Ben

Name of Publisher, Distributor, etc.

University of California, Davis

Date of Publication, Distribution, etc.

2014

Specific Material Designation and Extent of Item

222

Text of Note

Committee members: Hihath, Joshua; Islam, Saif M.; Yoo, S. J. B.

Text of Note

Place of publication: United States, Ann Arbor; ISBN=978-1-321-60820-5

Dissertation or thesis details and type of degree

Ph.D.

Discipline of degree

Electrical and Computer Engineering

Body granting the degree

University of California, Davis

Text preceding or following the note

2014

Text of Note

There has been extensive research in realizing large-scale integration of silicon (Si) photonics for long-haul communications, high-throughput optical interconnects, and future high performance computing (HPC). The impetus for this research lies in the fact that the silicon-on-insulator (SOI) platform is fully compatible with CMOS technology which drives mature IC technology and allows for a convergence with large-scale integrated photonics. Recent advances in key components such as high-contrast, low-loss arrayed waveguide gratings/routers (AWG/AWGR), high speed optical modulators, germanium photo-detectors, and single-wavelength hybrid silicon laser sources have all paved a path towards realizing large chip-scale optical systems with various functionalities. Recently, the energy efficiency of these photonic components in an optical link have drawn strong attention with some projections indicating by 2020, the energy consumption of most components in 100-gigabit-per-second (Gbps) systems will be between a few pico-Joules (pJ) and sub-pJ per bit. Therefore, over the past few years, there has been keen interest in heterogeneous integration of III-V compounds with silicon to realize monolithic integration of efficient hybrid devices.

Computer Engineering; Electrical engineering

Subject Term

Applied sciences;Functional photonic circuits;Heterogeneous integration;Iii-v semiconductor compounds;Silicon

Eftekhari, Zahra

Yoo, S. J. Ben

Subdivision

Electrical and Computer Engineering

University of California, Davis

Call Number

1665571929; 3685191

Electronic name

p

[Thesis]

276903

a

Y