عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
9401040788
(Number (ISBN
9401101736
(Number (ISBN
9789401040785
(Number (ISBN
9789401101738
NATIONAL BIBLIOGRAPHY NUMBER
Number
b594606
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Wide Band Gap Electronic Materials
General Material Designation
[Book]
First Statement of Responsibility
edited by Mark A. Prelas, Peter Gielisse, Galina Popovici, Boris V. Spitsyn, Tina Stacy.
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Dordrecht
Name of Publisher, Distributor, etc.
Springer Netherlands
Date of Publication, Distribution, etc.
1995
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
(552 pages)
SERIES
Series Title
NATO ASI Series, 3. High Technology,, 1.
CONTENTS NOTE
Text of Note
Preface. Diamond:- Growth and Doping. Characterization and Properties. Applications. Amorphous and Diamond-Like Carbon Films:- Growth and Doping. Characterization and Properties. Applications. Other Wide Band Gap Semiconductors:- Growth and Doping. Characterization and Properties. Applications. Oral Presentations. Poster Presentations. Author Index. Key Word Index.
SUMMARY OR ABSTRACT
Text of Note
Wide Band Gap Electronic Materials covers topics including electronic doping of diamond, n -type diamond, negative electron affinity of diamond, applications of aluminum nitride, the doping of boron nitride, wide band gap electronic applications, and nanophase diamond.
One of the highlights is the description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices.
Nanophase diamond particles having a narrow size distribution around 4 nm can be created by an explosive shock wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants.
Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride.
One of the highlights is the description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices.
Nanophase diamond particles having a narrow size distribution around 4 nm can be created by an explosive shock wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants.
Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride.
PARALLEL TITLE PROPER
Parallel Title
Proceedings of the NATO Advanced Research Workshop on 'Wide Band Gap Electronic Materials -- Diamond, Aluminum Nitride and Boron Nitride', Minsk, Belarus, May 4--6, 1994
TOPICAL NAME USED AS SUBJECT
Electronics -- Materials -- Congresses.
Electronics -- Materials.
Wide gap semiconductors -- Congresses.
PERSONAL NAME - PRIMARY RESPONSIBILITY
edited by Mark A. Prelas, Peter Gielisse, Galina Popovici, Boris V. Spitsyn, Tina Stacy.
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
Boris V Spitsyn
Galina Popovici
Mark A Prelas
Peter Gielisse
Tina Stacy
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب [Book]
Y
