عنوان

Diffusion in Materials

(Number (ISBN

940091976X

(Number (ISBN

9789400919761

Number

b592752

Title Proper

Diffusion in Materials

General Material Designation

[Book]

First Statement of Responsibility

edited by A.L. Laskar, J.L. Bocquet, G. Brebec, C. Monty.

Place of Publication, Distribution, etc.

Dordrecht

Name of Publisher, Distributor, etc.

Springer Netherlands

Date of Publication, Distribution, etc.

1990

Specific Material Designation and Extent of Item

(XVIII, 688 pages)

Series Title

NATO ASI series., Series E,, Applied sciences ;, 179.

Text of Note

Introductory lecture --; I --; Diffusion Theory --; Thermally activated processes in solids --; Atomic theory of diffusion-linear response theory --; Diffusion in alloys --; Non linear phenomena in solid state diffusion --; Diffusion in heterogeneous materials --; II --; Point Defect Parameters Diffusion Coefficients --; Evaluation of diffusion coefficients --; Calculation of point defect parameters in ionic materials --; Monte Carlo simulation of diffusion in solids: Some recent developments --; Experimental techniques for the measurement of diffusion coefficients --; Diffusion and soft phonons in bcc metals --; Vacancy-mediated interstitial-substitutional diffusion in semiconducting and metallic matrices --; III --; Diffusion in Short Circuits and Under Irradiation --; Surface diffusion on metals (abstract) --; Dislocation and grain boundary diffusion --; Interdiffusion in thin films (abstract) --; Diffusion and precipitation under irradiation --; IV --; Diffusion in Ceramics (Oxides, Carbides, Nitrides) --; Defects and diffusion in oxides --; Diffusion in high-Tc superconductors --; Analysis of oxygen diffusion in superconducting YBa2Cu307-? ceramic oxides --; Diffusion in carbides and nitrides --; V --; Diffusion in Ionic Solids --; Diffusion in ionic solids --; Surface and dislocation effects on diffusion in ionic crystals --; The ionic hall effect in crystals --; Diffusion in fast -ion conductors --; Diffusion in geomaterials (abstract) --; VI --; Diffusion in Semiconductors --; Atomic diffusion in homopolar semiconductors (abstract) --; Diffusion of dopants in silicon --; Diffusion in compound semiconductors --; Experimental studies of hydrogen motion in hydrogenated amorphous silicon and germanium --; VII --; Diffusion in Non Crystalline Materials --; Diffusion in conducting polymers --; Diffusion in amorphous materials --; Amorphization by solid state reaction --; APPENDIX Posters-abstracts --; Related to Chapter I --; S. Malik A.V. Chadwick Oxidation in a temperature gradient --; S.A. Akbar Atomistic treatment of demixing in multicomponent oxides --; S.A. Akbar The path probability method: An atomistic technique in diffusion --; Related to Chapter II --; C. Lexcellent G. Some J. Bernardini S. Benlemlih Is a correlation between the high temperature behaviour of highly concentrated solid solutions in stationary creep and in diffusion possible? --; P.W.M. Jacobs M.L. Vernon Defect energies for magnesium oxide and lithium oxide --; S.-Q. Shi D.A. Thompson W.W. Smeltzer M.P. Riehm Deuterium permeation behavior in polycristalline nickel implanted with nickel and helium ions --; C. Maunier and V. Pontikis Intergranular superionic conductivity in bicrystals of the fluorite structure --; A. Menai, M. Kherraz, J. Bernardini and Moya Determination of diffusion coefficients in presence of precipitation of the diffusing atoms in alloys --; J. Fischer and P. Jung Diffusion inferritic FeAlNiNb studied by NiAl-precipitate coarsening --; J. Grammatikakis, K. Eftaxias, V. Hadjicontis and V. Katsika Interconnection of the diffusion coefficients of various elements in aluminium --; T.D. Andreadis and M. Rosen Defect concentration dependent migration energies and defect diffusion in irradiated AgZn alloys --; Related to Chapter III --; A.M. Brass, A. Chanfreau and J. Chene Are grain boundaries short-diffusion paths for hydrogen diffusion in high purity nickel? --; I.A. Szabo, D.L. Beke and F.J. Kedves On the transition between the C-and B-kinetic regimes for grain-boundary diffusion --; R. Scholz Blank profiles in tracer diffusion under irradiation --; Related to Chapter IV --; D. Prot, M. Miloche and C. Monty Oxygen self-diffusion in aluminium oxide single crystals --; U. Littmark and H.C. Paulini Carbide formation during post annealing of a-c:D coated molybdenum --; Related to Chapter V --; S.K. Wonnell and L.M. Slifkin Measurement of the ionic space charge potential and defect formation parameters in AgBr --; T.S. Bush, A.V. Chadwick, M. Cole and C.R.A. Catlow Ionic conductivity and local structure of lanthanide??-alumina --; S.R. Elliott Non-debye relaxation in ionically-conducting glasses --; W. Soppe Ionic conductivity of borate glasses --; K. Stanley, B. Finkernagel and A. Laskar Selenium ion diffusion in silver halides --; Related to Chapter VI --; C.A. Londos Diffusivities and solubilities of various elements in silicon --; S. Mitra and J. Shinar Long range atomic H motion in p-doped rf-sputter deposited a-Si:H --; M. Backhaus-Ricoult Role of diffusion in solid state reactions between SiC and (Fe, Ni) alloys --; L.H. Allen, D. Theodore and J.W. Mayer Si crystal growth in the Au and poly Si system during thermal anneal --; I. Delidais, P. Maugis, D. Ballutaud and J.L. Maurice Hydrogenation and oxidation of p-type silicon --; A. Chari, P. De Mierry, D. Ballutaud and M. Aucouturier Introduction and diffusion of hydrogen in silicon --; Related to Chapter VII --; E. Gaffet, N. Merk and G. Martin Crystal to amorphous phase transition induced by ball milling in Ni-Zr alloys --; J.C. Mesquita and L.M. Abrantes Polypyrrole --; counter ions motion and the diffusion model --; D. Jacobs and H. Nakanishi Correlation functions and the diffusion coefficient for random hopping models --; J.C. Dyre AC properties of disordered ionic conductors --; V. Dupuis, M.F. Ravet, C. Tete and M. Piecuch Stability of multilayers for X-ray optics under pulsed laser heating.

Text of Note

This volume is the proceedings of the NATO Advanced Study Institute, "Diffusion in Materials", held at "Centre Paul Langevin", Aussois, during March 12-25, 1989. There were 105 participants of whom 24 were lecturers and members of the international advisory committee. In addition to the participants from NATO countries, a small number of participants came from Australia, Hungary, Poland and Tunisia. The principal aim of the organizing committee was to bring together scientists of wide interest and expertise in the field of diffusion and to familiarize the young workers in material science with the wide range of theoretical models and methods and of experimental techniques . The Institute was concerned with the study of diffusion and related phenomena in solids which are at the cutting edge of novel technologies. The discussion of basic theories of defects in solids and their transport, with their applications in the understanding of diffusion processes in "simple solids" was followed by the wide range of current theoretical models and methods, experimental techniques and their potential. The lectures on the diffusion in specific materials included : metals, dilute and concentrated alloys, simple and compound semiconductors, stoichiometric and non-stoichiometric oxides, high-Tc compounds, carbides, nitrides, silicates, conducting polymers and thin films, ionic, superionic, amorphous and irradiated materials.

Parallel Title

Proceedings of the NATO Advanced Study Institute, Aussois, France, March 12-25, 1989

Physical organic chemistry.

Surfaces (Physics)

edited by A.L. Laskar, J.L. Bocquet, G. Brebec, C. Monty.

A L Laskar

C Monty

G Brebec

J L Bocquet

Electronic name

[Book]

Y