edited by R. Lee Ross, Stefan P. Svensson, Paolo Lugli.
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Dordrecht
Name of Publisher, Distributor, etc.
Springer Netherlands
Date of Publication, Distribution, etc.
1996
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
(364 pages)
SERIES
Series Title
NATO ASI series., Series E,, Applied sciences ;, 309.
CONTENTS NOTE
Text of Note
Preface. Introduction. 1. Introduction to PHEMTs; J.V. Dilorenzo, et al. 2. Pseudomorphic HEMTs: Device Physics and Materials Layer Design; T. Grave. 3. Pseudomorphic HEMT: Materials Growth and Characterization; D.C. Streit. PHEMT Device Fabrication. 4. Gate Formation Technologies; P.C. Chao. 5. Vias, Backside Thinning and Passive Elements; J.A. Turner. Modeling, Design, Simulation and Test. 6. Field-Effect Transistor Models and Microwave CAD; R.J. Trew. 7. HEMT Models and Simulations; P. Lugli, et al. 8. MMIC Circuit Design; S. Weinreb. 9. Accurate Active Device Models for Computer Aided Design of MMICs; R. Tayrani. 10. Advanced CAD Models; G. Ghione, et al. 11. Test and Reliability; B.R. Allen. Related Technologies. 12. InP-Based Power HEMTs; M. Matloubian, L.E. Larson. Applications. 13. Space Applications of P-HEMT Devices; G. Gatti. 14. European Applications of Pseudomorphic HEMTs - Military and Commercial; J. Favre. 15. U.S. Applications of HEMT Technology in Military and Commercial Systems; E.I. Sobolewski.
SUMMARY OR ABSTRACT
Text of Note
PHEMT devices and their incorporation into advanced monolithic integrated circuits is the enabling technology for modern microwave/millimeter wave system applications. Although still in its infancy, PHEMT MIMIC technology is already finding applications in both military and commercial systems, including radar, communication and automotive technologies. The successful team in a globally competitive market is one in which the solid-state scientist, circuit designer, system engineer and technical manager are cognizant of those considerations and requirements that influence each other's function. This book provides the reader with a comprehensive review of PHEMT technology, including materials, fabrication and processing, device physics, CAD tools and modelling, monolithic integrated circuit technology and applications. Readers with a broad range of specialities in one or more of the areas of materials, processing, device physics, circuit design, system design and marketing will be introduced quickly to important basic concepts and techniques. The specialist who has specific PHEMT experience will benefit from the broad range of topics covered and the open discussion of practical issues. Finally, the publication offers an additional benefit, in that it presents a broad scope to both the researcher and manager, both of whom must be aware and educated to remain relevant in an ever-expanding technology base.
PARALLEL TITLE PROPER
Parallel Title
Proceedings of the NATO Advanced Study Institute, Erice, Sicily, Italy, July 14-25, 1994
TOPICAL NAME USED AS SUBJECT
Computer-aided design.
Microwave integrated circuits -- Design and construction.
Modulation-doped field-effect transistors -- Design and construction.
PERSONAL NAME - PRIMARY RESPONSIBILITY
edited by R. Lee Ross, Stefan P. Svensson, Paolo Lugli.