عنوان

Porous Silicon Science and Technology :

(Number (ISBN

3662031205

(Number (ISBN

9783662031209

Number

b579273

Title Proper

Porous Silicon Science and Technology :

General Material Designation

[Book]

Other Title Information

Winter School Les Houches, 8 to 12 February 1994

First Statement of Responsibility

edited by Jean-Claude Vial, Jacques Derrien.

Place of Publication, Distribution, etc.

Berlin, Heidelberg

Name of Publisher, Distributor, etc.

Springer Berlin Heidelberg

Date of Publication, Distribution, etc.

1995

Specific Material Designation and Extent of Item

(xvii, 358 pages)

Series Title

Centre de Physique des Houches, 1.

Text of Note

Lecture 1 Fundamental aspects of the semiconductor-solution interface --; Lecture 2 The silicon/electrolyte interface --; Lecture 3 Porous silicon: material processing, properties and applications --; Lecture 4 Luminescence of porous silicon after electrochemical oxidation --; Lecture 5 Mechanism for light emission from nanoscale silicon --; Lecture 6 Theory of silicon crystallites. Part II --; Lecture 7 Doping of a quantum dot and self-limiting effect in electrochemical etching --; Lecture 8 Electronic and optical properties of semiconductors quantum wells --; Lecture 9 What can be learned from time resolved measurements on porous silicon luminescence --; Lecture 10 Ion beam analysis of thin films. Applications to porous silicon --; Lecture 11 IR spectroscopy of porous silicon --; Lecture 12 Nano characterization of porous silicon by transmission electron microscopy --; Lecture 13 Electron paramagnetic resonance spectroscopy: Defect and structural analysis of solids --; Lecture 14 Raman scattering in silicon nanostructures --; Lecture 15 Scattering of X-rays --; Lecture 16 X-ray photoemission spectroscopy --; Lecture 17 Optoelectronic properties of porous silicon. The electroluminescent devices --; Lecture 18 Porous silicon luminescence under cathodic polarisation conditions --; Lecture 19 Interrelation between electrical properties and visible luminescence of porous silicon --; Lecture 20 Characteristics of porous n-type silicon obtained by photoelectrochemical etching --; Lecture 21 Porous Si: From single porous layers to porosity superlattices.

Text of Note

The discovery of bright visible light emission from porous silicon has opened the door to various nanometer-sized silicon structures where the confinement of carriers gives rise to interesting physical properties. While the high efficiency of the light emission in the visible range is the common and most prominent feature, their structures display properties similar to other highly divided materials (even non-semiconductors), which justifies a multidisciplinary approach. The book addresses graduate students, physicists and engineers who want to learn about optoelectronic devices based on porous silicon and on the electrochemistry of semiconductors, basic techniques, and the theoretical background.

Crystallography.

Engineering.

Physics.

Class number

Book number

edited by Jean-Claude Vial, Jacques Derrien.

J Derrien

Jean-Claude Vial

Electronic name

[Book]

Y