1. Introduction --; 2. Surface Space-Charge Region in Thermal Equilibrium --; 3. Surface States --; 4. Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium --; 5. Surface Space-Charge Region in Non-Equilibrium --; 6. Interface States --; 7. Cleaved {110} Surfaces of III-V and II-VI Compound Semiconductors --; 8. {100} Surfaces of III-V, II-VI, and I-VII Compound Semiconductors with Zincblende Structure --; 9. {100} Surfaces of Silicon, Germanium, and Cubic Silicon Carbide --; 10. Cleaved Silicon and Germanium {111} Surfaces --; 11. Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces --; 12. Phase Transitions on Silicon and Germanium {111} Surfaces --; 13. {111} Surfaces of Compounds with Zincblende Structure --; 14. Monovalent Adatoms --; 15. Group-III Adatoms on Silicon Surfaces --; 16. Group-V Adatoms --; 17. Oxidation of Silicon and III-V Compound Semiconductors --; 18. Surface Passivation by Adsorbates and Surfactants --; 19. Semiconductor Interfaces --; References --; Index of Reconstructions and Adsorbates.
SUMMARY OR ABSTRACT
Text of Note
Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces to the general aspects of space-charge layers, of clean-surface and adatom-induced surface states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, resutls of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.