Proceedings of the JRDC International Symposium, Tsukuba, Japan, November 17-18, 1993
First Statement of Responsibility
by H. Sakaki, H. Noge.
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Berlin, Heidelberg
Name of Publisher, Distributor, etc.
Springer Berlin Heidelberg
Date of Publication, Distribution, etc.
1994
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
(XI, 356 p.).
SERIES
Series Title
Springer series in materials science, 31.
GENERAL NOTES
Text of Note
Bibliographic Level Mode of Issuance: Monograph.
CONTENTS NOTE
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I Electron Waves, Holography, and Quantum Mechanics --; Electron Holography and Its Applications to the Observation of the Microscopic World --; Studies on Domain States of Magnetic Substances by Electron Holography --; Electron and Ion Microscopy Without Lenses --; Measurability of the Schrödinger Wave --; Quantum Measurement and Fluctuations in Nanostructures --; II Electron Transport 1: Low-Dimensional Effects --; Control of Electron Scattering and Quantum Transition via Wave-Function Engineering in Nanostructures --; Quasi-Ballistic Quantum-Wire Transistors --; Quantum Electron-Wave Transport in Magnetic Fields --; Quantum Mechanical Analysis of Resonant Phenomena in Four-Terminal Junctions --; Study of the Electron-Focusing Spectrum by Quantum Theory and by the Quantized Billiard Model --; Phase Shifts and the Friedel Sum Rule Applied to the Asymmetric Tunneling Device --; Transport Through a Quantum Dot Far from Equilibrium --; III Electron Transport 2: Single-Electron and Spin Effects --; Photon-Assisted Tunneling Through a Quantum Dot: Theory and Experiment --; Envelope Modulation of Coulomb-Blockade Oscillations in Magnetic Fields --; Suppression of Single-Electron Charging Effects in Liquid-Crystal Molecules Due to Infrared Irradiation --; Spontaneous Spin Polarization Due to Electron-Electron Interaction in Quantum Wires --; IV Optical Processes and Microcavity Effects --; Terahertz, Photon-Assisted Tunneling in Semiconductor Nanostructures --; Exciton Radiative Lifetime in GaAs Quantum Wires: Wire-Width Dependence --; Magneto-Optical Effect in GaAs Quantum Wires: Wire-Width Dependence --; Optical Gain Due to Excitons in Quantum Wires --; Dynamical Processes of basing in CuCl Nanocrystals --; Exciton-Polaritons in Microcavities --; Investigation of Coulomb-Blockade Effects on the Squeezing Band Width of Semiconductor Lasers --; V Nanostructures 1: Edge Wires, Overgrowth, and Etching --; Single-Mode Stimulated Emission in a Quantum-Wire Laser Fabricated by Cleaved-Edge Overgrowth --; Fabrication of N-AlGaAs/GaAs Edge Quantum Wires on (111)B Facets with Gate-Electrode and Density Modulation of One-Dimensional Electrons --; Fabrication of Quantum-Wire Structures by Atomic-Layer Epitaxy and VPE Processes --; Ultrahigh-Vacuum In-Situ Patterning and MBE Overgrowth of GaAs and AlGaAs Using an InAs Mask Laser --; Fabrication of AlGaAs/GaAs Multi-QWRs with 15 nm Wire Width Using Two-Step Etching and MBE Regrowth --; VI Nanostructures 2: Wires Formed on Ridges and Grooves --; Quantum Wires and Quantum Dots for Fully Confined Semiconductor Lasers --; Optical Properties of GaAs Quantum-Wire Structures Fabricated by Hydrogen-Assisted Molecular Beam Epitaxy --; MBE Growth of Quantum-Wire Structures on Top of Sharp Riges Using a Mesa-Patterned Substrate --; Optical Anisotropy and Optical Gain of (311) GaAs Quantum-Wire Structures at Room Temperature --; VII Nanostructures 3: Spontaneous Dot Formation --; Optical Properties of Self-Organizing Quantum-Dot Structures --; Direct Formation of GaAs-GaAlAs Quantum-Dot Structures by Droplet Epitaxy --; Two-Dimensional Arrangement of InSb Epitaxial Nanoscale Crystals on Selenium-Treated Terraced GaAs Substrates --; Preparation of Nanocrystalline Silicon by Digital Chemical Vapor Deposition --; Condensed States and Optical Properties of the Organic Nanoscale Associates in Polymer Matrices --; VIII Epitaxy and Its Mechanisms for Nanofabrication --; Site-Specific Processes During MBE and MOMBE Growth of III-V Compounds on Singular and Vicinal Surfaces --; Surface Evolution of Gallium Arsenide Grown by Molecular Beam Epitaxy --; Morphological Evolution During Epitaxial Growth --; Migration Potential of Cation Adatoms on an As-Stabilized GaAs(001)-(2×4) Surface: A Theoretical Investigation --; Comparative Study of Homoepitaxial Growths on Si(001) and Ge(111) --; IX Atom Manipulation and Surfaces --; Quantum Corrals --; Atomcraft Technology: Single-Atom Deposition and Re-Removal by the Scanning Tunneling Microscope --; Time-Resolved Atomic-Scale Manipulation by STM --; Nanometer-Scale Local Hydrization of the Si(111)-(7×7) Surface Using an STM Tip --; Electrochemical Modification of Titanium and Silicon Surfaces Using the Scanning Tunneling Microscope --; Electrical Transport Properties of the Si(111) Surface with Control of Its Atomic-Scale Structure --; Cryogenic STM/STS of Sub-Nanometer Superstructure in High-Tc YBa2Cu3O7-? Thin Films --; Elastic Imaging with Nanoscale and Atomic Resolution by Ultrasonic Force Microscopy (UFM) --; Ultrasonic Force Microscopy of Biopolymers at Frequencies Above 100 MHz --; Index of Contributors.
SUMMARY OR ABSTRACT
Text of Note
Nanostructures and Quantum Effects documents the most recent developments in the field of quantum effects in semiconductor nanostructures such as quantum wires and boxes. Interrelated topics such as quantum interference, low-dimensional electron transport, single-electron and microcavity effects, electron holography, and quantum measurements together with the most recent progress in epitaxial growth of nanostructures and the manipulation of atoms using STM-related approaches are covered.