عنوان

Soft Errors.

(Number (ISBN

1322999023

(Number (ISBN

146659084X

(Number (ISBN

9781322999029

(Number (ISBN

9781466590847

Number

b573778

Title Proper

Soft Errors.

General Material Designation

[Book]

First Statement of Responsibility

Jean-Luc Autran

Place of Publication, Distribution, etc.

CRC Press

Date of Publication, Distribution, etc.

2015

Text of Note

ForewordPrefaceAcknowledgmentsAuthorsEditorIntroductionGlossaryENVIRONMENTS: DEFINITION AND METROLOGYTerrestrial Cosmic Rays and Atmospheric Radiation BackgroundPrimary Cosmic RaysHistorical BackgroundExtragalactic and Galactic Cosmic Rays (GCRs)Solar Wind and Solar Energetic ParticlesMagnetospheric Cosmic RaysSecondary Cosmic Rays in the Atmosphere and at Ground LevelDevelopment of Air ShowersModulation Factors of Particle Production in the Atmosphere and at Ground LevelRadiation Environment at Ground Level (Particles, Flux, Variations, Shielding)Particle Fluxes at Sea LevelFlux VariationsShielding IssuesSynthesisTools, Codes, and Models to Simulate Atmospheric and Terrestrial CRsSEUTESTEXPACS (PARMA Model)QARMCORSIKAPLANETOCOSMICSCRYReferencesDetection and Characterization of Atmospheric Neutrons at Terrestrial Level: Neutron MonitorsNeutron Monitors (NM)Historical BackgroundNeutron Monitor Design and OperationNeutron Monitor Detection ResponsePlateau de Bure Neutron MonitorPdBNM DesignPdBNM Installation and OperationConnection to the Neutron Monitor DatabasePdBNM Monte Carlo SimulationConcluding RemarksReferencesNatural Radioactivity of Electronic MaterialsRadioactivityRadioactive DecayAlpha-Particle EmissionRadioactive Nuclides in NaturePrimordial RadionuclidesUranium Decay ChainThorium Decay ChainCosmic-Ray-Produced RadionuclidesRadonRadionuclides and Radioactive Contamination in Advanced CMOS TechnologiesAlpha Radiation from Interconnect Metallization and Packaging MaterialsEmissivity ModelAnalytical Model for MonolayersAnalytical Model for Multilayer StackUniversal Nomogram for Bulk SiliconReferencesAlpha-Radiation Metrology in Electronic MaterialsIntroductionAlpha-Particle Detection Techniques: Terms and DefinitionsGas-Filled CountersPrinciple of OperationIonization CountersProportional CountersUltralow-Background Alpha CounterDesign and Operation of the UltraLo-1800Signal Generation and RejectionPulse and Event ClassificationCosmogenics and Radon IssuesExample of MeasurementsMulticenter Comparison of Alpha-Particle MeasurementsOther TechniquesSilicon Alpha DetectorsLiquid and Solid-State ScintillatorsICP-MS and VPD ICP-MSReferencesSOFT ERRORS: MECHANISMS AND CHARACTERIZATIONParticle Interactions with Matter and Mechanisms of Soft Errors in Semiconductor CircuitsInteractions of Neutrons with MatterCross SectionTypes of Neutron-Matter InteractionsRecoil ProductsInteraction of Thermal Neutrons with 10BAtmospheric Neutron-Silicon Interaction DatabasesInteractions of Charged Particles with MatterIonizationStopping PowerRangeAlpha ParticlesHeavy IonsElectronsInteraction of Protons with MatterInteraction of Pions with MatterInteraction of Muons with MatterBasic Mechanisms of Single-Event Effects on Microelectronic DevicesCharge Deposition (or Generation)Charge TransportCharge CollectionSEU Mechanisms in Memories (Single-Bit Upset and Multiple-Cell Upset)SEE Mechanisms in Digital CircuitsSequential LogicCombinational LogicReferencesAccelerated TestsIntroductionMethodology and Test ProtocolsSEU Cross SectionTest Equipment RequirementsTest PlanTest ConditionsExperiments Using Intense Beams of ParticlesHigh-Energy NeutronsThermal NeutronsProtonsMuonsAlpha-Particle Accelerated Tests Using Solid SourcesEvaluation of Various Neutron Broad-Spectrum Sources from a Simulation ViewpointSimulation DetailsNuclear Event AnalysisImplications for the Soft-Error RateReferencesReal-Time (Life) TestingIntroductionReal-Time Testing MethodologyInstrumentation IssuesDifferentiation of the SER ComponentsStatistics for RTSER: Typical ExampleMetrology of Atmospheric Neutron FluxSurvey of a Few Recent RTSER ExperimentsIBMIntelSonyTohoku University, Hitachi, and Renesas ElectronicsCypressXilinxNXPRTSER Experiments Conducted at ASTEP and LSMASTEP and LSM Test PlatformsRTSER ExperimentsComparison with Accelerated TestsReferencesSOFT ERRORS: MODELING AND SIMULATION ISSUESModeling and Simulation of Single-Event Effects in Devices and CircuitsInterest in Modeling and SimulationMain Approaches of Electrical Simulation at Device LevelMain Simulation Approaches at Circuit LevelDevice-Level SimulationTransport ModelsEmerging Physical EffectsTCAD SimulationAnalytical and Compact Model ApproachesCircuit-Level Simulation ApproachesSPICE-Like Circuit SimulationMixed-Mode ApproachFull Numerical Simulation in the 3D Device DomainReferencesSoft-Error Rate (SER) Monte Carlo Simulation CodesGeneral-Purpose Monte Carlo Radiation-Transport CodesReview of Recent Monte Carlo Codes Dedicated to the SER IssueIntel Radiation Tool (IRT)PHITS-HyENEXSS Code SystemTIARA-G4Detailed Description of the TIARA-G4 CodeCircuit Architecture Construction ModuleRadiation-Event GeneratorInteraction, Transport, and Tracking ModuleSRAM Electrical-Response ModuleSoft-Error Rate Calculation ModuleExperimental versus Simulation Results: DiscussionImpact of Thermal and Low-Energy Neutrons on a 40 nm SRAM CircuitComparison between TIARA and TIARA-G4: Impact of the BEOL on the SERSER Estimation of a 65 nm SRAM under High-Energy Atmospheric NeutronsEffects of Low-Energy Muons on a 65 nm SRAM CircuitReferencesSOFT ERRORS IN EMERGING DEVICES AND CIRCUITSScaling Effects and Their Implications for Soft ErrorsIntroductionFeature-Size ScalingGeometric ScalingIon-Track Spatial Structure versus Device DimensionsCarrier Channeling in Wells and Electrical Related EffectsVariability and SEECritical ChargeIncreasing Sensitivity to Background RadiationLow-Energy ProtonsAtmospheric MuonsLow-Alpha-Material IssueTrends and Summary for Ultrascaled TechnologiesReferencesNatural Radiation in Nonvolatile Memories: A Case StudyIntroductionFlash Memory Architectures and Electrical OperationNOR ArchitectureNAND ArchitectureRadiation Effects in Floating-Gate MemoriesModeling and Simulation of Nonvolatile Memories Using TIARA-G4 PlatformDescription of TIARA-G4 NVM PlatformPhysical Model ConsideredSimulation ResultsExperimental CharacterizationExperimental versus Simulation Results: DiscussionReferencesSOI, FinFET, and Emerging DevicesIntroductionSilicon-on-Insulator (SOI) TechnologiesSEE Mechanisms in SOI Technologies3D Simulation Study of Radiation Response of 50 nm FDSOI DevicesSEU Sensitivity of FDSOI SRAM CellsMultiple-Gate DevicesImpact of Quantum EffectsTransient Response of Multiple-Gate DevicesRadiation Hardness of Circuits Based on Multiple-Gate DevicesBulk and SOI FinFETMultichannel Architectures with Multiple-Gate DevicesMultiple-Gate and Multichannel Devices with Independent GatesSimulation DetailsFinFET DevicesMC-NWFET DevicesComparison between FinFET and MC-NWFET DevicesJunctionless DevicesSimulation DetailsRadiation Sensitivity of Individual DevicesSEU Sensitivity of SRAM CellsIII-V FinFET and Tunnel FETReferences

Class number

Book number

Jean-Luc Autran

Jean-Luc Autran

Electronic name

[Book]

Y