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عنوان
Thin Film and Depth Profile Analysis

پدید آورنده
edited by Hans Oechsner.

موضوع
Physical organic chemistry.,Surfaces (Physics)

رده
QC176
.
84
.
S93
E358
1984

کتابخانه
Center and Library of Islamic Studies in European Languages

محل استقرار
استان: Qom ـ شهر: Qom

Center and Library of Islamic Studies in European Languages

تماس با کتابخانه : 32910706-025

INTERNATIONAL STANDARD BOOK NUMBER

(Number (ISBN
3642464998
(Number (ISBN
3642465013
(Number (ISBN
9783642464997
(Number (ISBN
9783642465017

NATIONAL BIBLIOGRAPHY NUMBER

Number
b568339

TITLE AND STATEMENT OF RESPONSIBILITY

Title Proper
Thin Film and Depth Profile Analysis
General Material Designation
[Book]
First Statement of Responsibility
edited by Hans Oechsner.

.PUBLICATION, DISTRIBUTION, ETC

Place of Publication, Distribution, etc.
Berlin, Heidelberg
Name of Publisher, Distributor, etc.
Springer Berlin Heidelberg
Date of Publication, Distribution, etc.
1984

SERIES

Series Title
Topics in current physics, 37.

CONTENTS NOTE

Text of Note
1. Introduction. --; 1.1 Requirements for Thin Film and In-Depth Analysis --; 1.2 Object and Outline of the Book --; References --; 2. The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis. --; 2.1 Methods to Determine Chemical Structures in Material Research --; 2.2 Selected Analytical Features Used to Determine Chemical Structures --; 2.3 Determining Physical Structures in Material Research --; 2.4 Application of Different Microanalytical Techniques to Specific Analytical Problems --; 2.5 Future Prospects --; References --; 3. Depth Profile and Interface Analysis of Thin Films by AES and XPS --; 3.1 Quantification from First Principles --; 3.2 Initial Transient Layer --; 3.3 Steady-State Region --; 3.4 Film-Substrate Interface --; References --; 4. Secondary Neutral Mass Spectrometry (SNMS) and Its Application to Depth Profile and Interface Analysis. --; 4.1 Background --; 4.2 Experimental Method --; 4.3 Quantification of SNMS --; 4.4 Applications of SNMS to Depth Profile Analysis --; 4.5 Concluding Remarks --; References --; 5. In-Situ Laser Measurements of Sputter Rates During SIMS/AES In-Depth Profiling. --; 5.1 Background --; 5.2 Principles of Laser Technique --; 5.3 Experiments --; 5.4 Results and Discussion --; 5.5 Conclusion --; References --; 6. Physical Limitations to Sputter Profiling at Interfaces --; Model Experiments with Ge/Si Using KARMA. --; 6.1 Background --; 6.2 Experimental Approach --; 6.3 Conversion of Raw Sputter Profiles into Depth Profiles --; 6.4 Depth Profiles of the Ge/Si Interface --; 6.5 Dose Effects and Preferential Sputtering --; 6.6 Depth Resolution in Sputter Profiling --; 6.7 Summary and Outlook --; References --; 7. Depth Resolution and Quantitative Evaluation of AES Sputtering Profiles --; 7.1 Background --; 7.2 Calibration of the Depth Scale --; 7.3 Calibration of the Concentration Scale --; 7.4 Depth Resolution in Sputter Profiling --; 7.5 Determination of the Resolution function --; 7.6 Deconvolution Procedures --; 7.7 Conclusion --; References --; 8. The Theory of Recoil Mixing in Solids --; 8.1 Background --; 8.2 Review of Recoil Mixing Models --; 8.3 General Formulation of Atomic Relocation Phenomena --; 8.4 Solutions to the Specific Mixing Models --; 8.5 Summary and Outlook --; 8.6 List of Symbols --; References --; Additional References with Titles.

SUMMARY OR ABSTRACT

Text of Note
The characterization of thin films and solid interfaces as well as the determina tion of concentration profiles in thin solid layers is one of the fields which re quire a rapid transfer of the results from basic research to technological applica tions and developments. It is the merit of the Dr. Wilhelm Heinrich and Else Heraeus-Stiftung to promote such a transfer by organizing high standard seminars mostly held at the "Physikzentrum" in Bad Honnef near Bonn. The present book has been stimulated by one of these seminars assembling most of the invited speakers as co-authors. The editor appreciates the cooperation of his colleagues contributing to this book. H. Oechsner Kaiserslautern, April 1984 v Contents 1. Introduction. ByH. Oechsner ... ... . 1. 1 Requirements for Thin Film and In-Depth Analysis ... 1 1. 2 Object and Outl i ne of the Book ... ... 2 4 References 2. The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis. By H.W. Werner (With 25 Fi gures) ... 5 2. 1 Methods to Determine Chemical Structures in Material Research 5 2. 2 Selected Analytical Features Used to Determine Chemical Structures 9 2. 2. 1 Depth Profi 1 ing ... ... 9 9 a) Destructive Depth Profiling b) Nondestructive Methods for Depth and Thin Film Analysis 15 19 2. 2. 2 Microspot Analysis and Element Imaging 2. 3 Determining Physical Structures in Material Research ... 27 2. 3. 1 X-Ray Diffraction ... ... 27 2. 3. 2 X-Ray Double Crystal Diffraction ... ... 28 2. 3.

PARALLEL TITLE PROPER

Parallel Title
With contributions by numerous experts

TOPICAL NAME USED AS SUBJECT

Physical organic chemistry.
Surfaces (Physics)

LIBRARY OF CONGRESS CLASSIFICATION

Class number
QC176
.
84
.
S93
Book number
E358
1984

PERSONAL NAME - PRIMARY RESPONSIBILITY

edited by Hans Oechsner.

PERSONAL NAME - ALTERNATIVE RESPONSIBILITY

Hans Oechsner

ELECTRONIC LOCATION AND ACCESS

Electronic name
 مطالعه متن کتاب 

[Book]

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