Lightwave Communications Technology, Part A - Material Growth Technologies.
First Statement of Responsibility
Robert K Willardson
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Burlington
Name of Publisher, Distributor, etc.
Elsevier
Date of Publication, Distribution, etc.
1985
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
(437 pages)
CONTENTS NOTE
Text of Note
Front Cover; Lightwave Communications Technology; Copyright Page; Contents; List of Contributors; Treatise Foreword; Foreword; Preface; Chapter 1. The Liquid-Phase Epitaxial Growth of InGaAsP; Chapter 2. Molecular Beam Epitaxy for III-V Compound Semiconductors; Chapter 3. Organometallic Vapor-Phase Epitaxial Growth of III-V Semiconductors; Chapter 4. Halide and Chloride Transport Vapor-Phase Deposition of InGaAsP and GaAs; Chapter 5. Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1-xAsyP1-y Alloys; Chapter 6. Defects in III --; V Compound Semiconductors; Index. Contents of Volume 22Contents of Previous Volumes.