ESD in Silicon Integrated Circuits (Second Edition)
General Material Designation
[Book]
First Statement of Responsibility
Ajith Amerasekera, Charvaka Duvvury.
EDITION STATEMENT
Edition Statement
2nd ed
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Chichester
Name of Publisher, Distributor, etc.
John Wiley Sons Ltd
Date of Publication, Distribution, etc.
2002
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
(xxx, 422 pages)
GENERAL NOTES
Text of Note
Title from title screen (viewed Nov. 20, 2003).
CONTENTS NOTE
Text of Note
ESD Phenomenon --;Test Methods --;Physics and Operation of ESD Protection Circuit Elements --;ESD Protection Circuit Design Concepts and Strategy --;Design and Layout Requirements --;Advanced Protection Design --;Failure Modes, Reliability Issues, and Case Studies --;Influence of Processing on ESD --;Device Modeling of High Current Effects --;Circuit Simulation Basics, Approaches, and Applications.
SUMMARY OR ABSTRACT
Text of Note
As high density circuits move deeper into submicron dimensions Electrostatic Discharge (ESD) effects become an increasing concern. This new edition of a classic reference presents a practical and systematic approach to ESD device physics, modelling and design techniques. The authors draw upon their wealth of industrial experience to provide a complete overview of ESD and its implications in the development of advanced integrated circuits. Fully revised to incorporate the latest industry achievements and featuring:*Design methods for a variety of technologies from 1 micron to the current sub-micron regimes, along with complete design approaches for MOS, BiCMOS and Power MOSFETs.*New sections on ESD design rules, process technology effects, layout approaches, package effects and circuit simulations.*Guidance on the implementation of circuit protection measures for a range of I/O configurations.*Detailed coverage of ESD simulation stress models. This unique reference provides the means to design protection circuits for a variety of applications and to diagnose and solve ESD problems in IC products. The coverage of state-of-the-art circuit design for ESD prevention will appeal to engineers and scientists working in the fields of IC and transistor design. Graduate students and researchers in device/circuit modeling and semiconductor reliability will appreciate this comprehensive coverage of ESD fundamentals.
PARALLEL TITLE PROPER
Parallel Title
Electrostatic Discharge in silicon integrated circuits