عنوان

Progress in SOI structures and devices operating at extreme conditions

(Number (ISBN

140200575X

(Number (ISBN

1402005768

(Number (ISBN

9781402005756

(Number (ISBN

9781402005763

Number

b541004

Title Proper

Progress in SOI structures and devices operating at extreme conditions

General Material Designation

[Book]

First Statement of Responsibility

ed. by F. Balestra, A. Nazarov and V.S. Lysenko.

Place of Publication, Distribution, etc.

Dordrecht

Name of Publisher, Distributor, etc.

Kluwer Academic Publishers, cop.

Date of Publication, Distribution, etc.

2002

Specific Material Designation and Extent of Item

IX, 351 p. : ill. ; 25 cm.

Series Title

NATO science series., Series II,, Mathematics, physics and chemistry ;, vol. 58.

Text of Note

Publ. in cooperation with NATO Scientific Affairs Division. - Proceedings of the NATO advanced research workshop on progress in SOI structures and devices operating at extreme conditions, Kyiv, Ukraine, 15-20 October 2000.

Text of Note

Preface. Innovation in material technologies. Perspectives of SIMOX technology; M.J. Anc. MBE growth of the top layer in Si/YSZ/Si structure; V.G. Beshenkov, et al. SiCOI structures, Technology and characterization; C. Serre, et al. New SiC on insulator wafers based on the Smart-Cut (R) approach and their potential applications; J.P. Joly, et al. ELTRAN (R) (SOI-Epi Wafer (R)) Technology; T. Yonehara, K. Sakaguchi. Low dimension properties of nanostructures on ultra thin layers of silicon formed by oxidation of ion cut SOI wafers and electron lithography; V.P. Popov, et al. Reliability of SOI devices operating at harsh conditions. SOI for Harsh Environment Applications in the USA; C.A. Colinge. Performance and reliability of deep submicron SOI MOSFETs in a wide temperature range; F. Balestra. Strategies for high-temperature electronics: a Western European Perspective; C. Johnston, A. Crossley. Charge carrier injection and trapping in the buried oxides of SOI structures; A.N. Nazarov, et al. Cryogenic investigations of SIMOX buried oxide parameters; V.S. Lysenko, et al. Gate-All Around Technology for Harsh Environment Applications; J.P. Colinge. Low-Noise High-Temperature SOI Analog Circuits; V. Dessard, et al. Influence of gamma-radiation on short channel SOI-MOSFETs with thin SiO2 films; C. Claeys, et al. Radiation effects in SOI magnetic sensitive elements under different radiation conditions; A.D. Mokrushin, et al. Characterization of advanced SOI materials and devices. Similarity relation for I-V characteristics of FETs with different channel shape; V.N. Dobrovolsky, et al. Laser-recrystallized SOI layers for sensor applications at cryogenic temperatures; A. Druzhinin,et al. Characterization and modeling of advanced SOI materials and devices; F. Allibert, et al. Modeling and measurements of generation and recombination currents in thin-film SOI gated-diodes; T.E. Rudenko, V.I. Kilchytska. Defect creation mechanisms due to hot-carriers in 0.15 mu/m SIMOX MOSFETs; P. Dimitrakis, et al. Defects and their electronic properties in high-pressure-annealed SOI structure sliced by hydrogen; V.P. Popov, et al. DC and AC models of partially-depleted SOI MOSFETs in weak inversion; D. Tomaszewski, et al. Perspectives of SOI structures and devices. On scaling the thin film Si thickness of SOI substrates. A perspective on Wafer Bonding for Thin Film Devices; K.D. Hobart, et al. Oxidized porous silicon based SOI: untapped resources; V. Bondarenko, et al. Electron-hole pair reversed drift in SOI structure; V.N. Dobrovolksy, et al. A novel depleted semi-insulating silicon material for high frequency applications; M. Johansson, S. Bengtsson. Self-organizing growth of silicon dot- and wire-like microcrystals on isolated substrates; A.I. Klimovskaya, et al. Author Index.

Extreme environments -- Congresses.

Semiconductors.

Silicon-on-insulator technology -- Congresses.

ed. by F. Balestra, A. Nazarov and V.S. Lysenko.

A Nazarov

F Balestra

Electronic name

[Book]

Y